2SD2121_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SD2121 ■ Features

  • Low frequency power amplifier
  • Complementary to 2SB1407 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 35 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 2.5 Collector Current - Pulse ICP 3 Collector Power Dissipation PC 18 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 1 mA， IE= 0 35 Collector- emitter breakdown voltage VCEO Ic= 10 mA， RBE= ∞ 35 Emitter - base breakdown voltage VEBO IE= 1 mA， IC= 0 5 Collector-base cut-off current ICBO VCB= 35 V , IE= 0 20 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=2 A, IB=200mA 1 Base - emitter saturation voltage VBE(sat) IC=2 A, IB=200mA 1.2 Base - emitter voltage VBE VCE= 2V, IC= 1.5 A 1.5 VCE= 2 V, IC= 500mA 60 320 VCE= 2V, IC= 1.5 A 20 V uA DC current gain hFE V ■ Classification of hfe(1) Type 2SD2121-B 2SD2121-C 2SD2121-D Range 60-120 100-200 160-320

www.kexin.com.cn2 Transistors NPN Transistors 2SD2121 ■ Typical Characterisitics Maximum Collector Dissipation Curve 0 50 100 150 Case temperature TC (ϒC) Collector power dissipation PC (W) 1.0 3.0Collector current IC (A) 0.3 0.1 1 103 30 100 Collector to emitter voltage VCE (V) Ta = 25bC 1 shot pulse iC(peak) IC(max) 1 ms Area of Safe Operation DC Operation(T C = 25 bC) PW = 10 ms Ta = 25bCIB = 0 2.0 1.6 1.2 0.8 0.4 Collector current IC (A) Collector to emitter voltage VCE (V) 3 52 4 Typical Output Characteristics 2 mA 1,000 300 100 0.03 0.1 DC current transfer ratio hFE 0.3 Collector current IC (A) 1.0 3.0 VCE = 2 V Ta = 25 C DC Current Transfer Ratio vs. Collector Current Collector to Emitter Saturation Voltage vs. Collector Current 1.0 0.3 0.1 Collector to emitter saturation voltage VCE(sat) (V) 0.03 0.01 Collector current IC (A) IC = 10 IB Ta = 25 C 2.0 1.6 1.2 0.8 0.4 Collector current IC (A) 0.4 Base to emitter voltage VBE (V) 1.20.8 2.01.6 Typical Transfer Characteristics VCE = 2 V Ta = 25 C b b b