2SD2114K KEXIN

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Technical content

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High DC current gain. High emitter-base voltage. Low VCE (sat). Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BV CBO IC=10ìA 25 V Collector-emitter breakdown voltage BV CEO IC=1mA 20 V Emitter-base breakdown voltage BV EBO IE=10ìA 12 V Collector cutoff current I CBO VCB=20V 0.5 ìA Emitter cutoff current I EBO VEB=10V 0.5 ìA Collector-emitter saturation voltage V CE(sat) IC/IB=500mA/20mA 0.18 0.4 V DC current transfer ratio h FE VCE=3V, IC=10mA 820 2700 Output capacitance * f T VCE=10V, IE= -50mA, f=100MHz 350 MHz Transition frequency C ob VCB=10V, IE=0, f=1MHz 8.0 pF Output On-resistance R on IB=1mA, Vi=100mV(rms), f=1kHz 0.8 Ù * Measured using pulse current. hFE Classification Marking Rank V W hFE 820 1800 1200 2700 BB Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 25 V Collector-emitter voltage V CEO 20 V Emitter-base voltage V EBO 12 V 0.5 Collector power dissipation P C 0.2 W Junction temperature Tj 150 Storage temperature T stg - 5 5t o+ 1 5 0 * Single pulse Pw=100ms. Collector current I C A