2SD2100_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors NPN Transistors 2SD2100 ■ Features
- Low saturation voltage
- Large current cappacity
- Complementary to 2SB1397 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 2 Collector Current - Pulse ICP 4 Collector Power Dissipation PC 1.3 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 25 Collector- emitter breakdown voltage VCEO Ic= 1 mA， RBE= ∞ 20 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 6 Collector-base cut-off current ICBO VCB= 20 V , IE= 0 1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=1 A, IB=50mA 0.25 0.5 Base - emitter saturation voltage VBE(sat) IC=1 A, IB=50mA 1.5 VCE= 2V, IC= 500mA 70 VCE= 2V, IC= 2 A 50 Diode Forward voltage VF IF=500mA 1.5 V Base to emitter resistance RBE 1.6 kΩ Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 25 pF Transition frequency fT VCE= 2V, IC= 500 mA 200 MHz V uA V DC current gain hFE ■ Marking Marking DP RBE Base Collector Emitter
www.kexin.com.cn2 Transistors NPN Transistors 2SD2100 ■ Typical Characterisitics
www.kexin.com.cn 3 Tran sistors NPN Transistors 2SD2100 ■ Typical Characterisitics