2SB1397 SANYO

Document overview

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Technical content

Features

  • Low saturation voltage. - Contains diode between collector and emitter. - Contains bias resistance between base and emitter. + Large current capacity. - Small-sized package making it easy to provide high-density, small-sized hybrid ICs. ( ):2SB1397 Absolute Maximum Ratings at Ta= 25°C unit Collector to Base Voltage Vcso (—)25 Vv Collector to Emitter Voltage Vogo (—)20 Vv Emitter to Base Voltage VEBO (-)6 Vv Collector Current Ig (-—)2 A Collector Current(Pulse) Top (—)4 A Collector Dissipation Pc Mounted on ceramic board (250mm? X 0.8mm) 13° W Junction Temperature TZ 150 °C Storage Temperature Tstg ~55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current Tepo Vep=(—)20V,Ig=0 (-)1.0 pA DC Current Gain hrg(1) Vor=(-)2V,Io=(—)0.5A (—)70 hrg(2) Vor=(—)2VIc=(-)2A — (—)50 Gain Bandwidth Product fr Vor=(-)2V,Io=(—)0.5A (300)200 MHz Output Capacitance Cob Vop=(—)10V,f=1MHz (40)25 pF C-E Saturation Voltage Voex(at) Ic=(—)1A,Ig=(—)50mA (—)0.25 (—)0.5 Vv B-E Saturation Voltage VBEGat) Ig=(—)1A,Ig=(—)50mA (-)1.5 v C-B Breakdown Voltage Vercso Ic=(—-)104A,Ip=0 (—)25 v C-E Breakdown Voltage Vesryczo(1) I¢=(—)104A,RpE= © (-)25 Vv Vosryceo(2) Ic=(—)10mA,Rge= © (-)20 Vv Diode Forward Voltage Vr Ip=0.5A (-)1.5 v Base to Emitter Resistance Rpg 1.6 kQ Marking 2SB1397: BP 2SD2100 : DP Package Dimensions 2038 Electrical Connection (unit : mm) Collector ara [ ps | C7 exe) axel 5 Rt R $44] [I ts t ht Emitter Emitter 3 30 0.4 E: Emitter PNP NPN Toy C: Collect (Bottom View) SANYO: PCP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 12894TH/7149MO,TS No.3176-1/4

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” fr_- Ic Cob - Veg g HT TTT TT ty Rinna : {thee a” fT AT TaN) RE 3 7 Y ee ive oN) | RSSe Seo oe adil Ji HTT #3 r 4 lVcg=2V © |roimyz : S [or PNP, minus sign is omitted) sol For PNP, minus sign is omitted) -0.01 0.1 -10 1.0 T 10 Collector Current,Ig — A Collector to Base Voltage, Vop — V ; ASO , ASO [oe tf fT TT Ta a he | PER «+, | fo . ie oS 7 SSS io tT KT UNAS qt |e i ee a a A ie ee ee o— it Prey re 4s oe A a Xo, AA 5 t 3 _ é tH LA F< -o.1|Ta=26°C NS & oa Ta=25°C iN : Nee i [I S lsonted on ceramic board H-}-S 7 Single pulse ——| I SH i (250ma"X<0.8mm) fi ty] 250mm" 0.8mm) } i [| co <1 \\. Collector to Emitter Voltage, Vos -v Colleétor to Emitter Voltage, Von, — Vv No.3176-3/4

2$B1397/2SD2100 ——SSSSSSSSSSSSSSSSSSse Po - Ta i a |_| 28B1397/2SD2100 e MTN fe: it | Re | wo Ne, = ef | Jot _| | Re 2 08 ECOL ATT ey ee. #06 Rea, eCOOOER 3 0.4 om fa || | i ° EEE Ck ° IS 0 20 46 60 60. 10 10 KO 160 Ambient Temperature,Ta — °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of . third parties. No.3176-4/4