2SD2098_15 KEXIN

Document overview

www.kexin.com.cn 1 Tran sistors NPN Transistors 2SD2098 ■ Features

Excellent DC current gain characteristics
Complements the 2SB1386 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 5 A Collector Power Dissipation PC 0.5 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 50 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 20 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 6 Collector-base cut-off current ICBO VCB= 40 V , IE= 0 0.5 Emitter cut-off current IEBO VEB= 5V , IC=0 0.5 Collector-emitter saturation voltage VCE(sat) IC=4 A, IB=100 mA 1 Base - emitter saturation voltage VBE(sat) IC=4 A, IB=100 mA 1.2 DC current gain hFE VCE= 2V, IC= 500 mA 120 390 Collector output capacitance Cob VCB= 20V, IE= 0,f=1MHz 30 pF Transition frequency fT VCE= 6V, IC= 50mA,f=100MHz 150 MHz V V uA ■ Classification of hfe Type 2SD2098-Q 2SD2098-R Range 120-270 180-390 Marking AH Q* AH R*