2SD2074 PANASONIC

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Silicon NPN epitaxial planer type For low-frequency output amplification For muting For DC-DC converter n Features l Low collector to emitter saturation voltage VCE(sat). l Low ON resistance Ron. l High foward current transfer ratio hFE . l Allowing supply with the radial taping. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base MT2 Type Package 2.5–0.1 4.5–0.114.5–0.5 2.5–0.5 2.5–0.5 2.5–0.1 6.9–0.1 1.05 –0.05 (1.45) 4.00.7 0.8 0.15 0.5 0.21.01.0 0.65 max. 0.45 +0.1 –0.05 0.45 +0.1 –0.05 321 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 0.5 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse Symbol I CBO V CBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) V BE(sat) fT C ob R on*3 Conditions V CB = 25V , IE = 0 IC = 10mA, IE = 0 IC = 1mA, IB = 0 IE = 10mA, IC = 0 V CE = 2V , IC = 0.5A*2 V CE = 2V , IC = 1A*2 IC = 0.5A, IB = 20mA IC = 0.5A, IB = 50mA V CB = 10V , IE = –50mA, f = 200MHz V CB = 10V , IE = 0, f= 1MHz min 200 typ 0.13 200 1.0 max 100 800 0.4 1.2 Unit nA V V V V V MHz pF W *1hFE1 Rank classification Rank R S T hFE1 200 ~ 350 300 ~ 500 400 ~ 800 1.2–0.1 0.65max. 0.45 0.1 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (HW type) *3R on Measurement circuit VB IB=1mA R on= 5 1000(W ) f=1kHz V=0.3V 1kW VA VV VA–VB VB *2 Pulse measurement * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion

PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB R on — IB 0 200 16040 120 80 1.2 1.0 0.8 0.6 0.4 0.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 06 5413 2 1.2 1.0 0.8 0.6 0.4 0.2 Ta=25˚C 2.5mA 2.0mA 1.5mA 0.5mA 1.0mA 3.0mA 3.5mA IB=4.0mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3

100 IC /IB=25

25˚C –25˚C Ta=75˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=–25˚C 25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 1200 1000 800 600 400 200 VCE =2V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 400 300 100 250 350 200 150 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.01 0.1 1 100.03 0.3 3 0.1 0.3 100 300 1000 f=1kHz V=0.3V VB R on measuring circuit IB=1mA VA V Base current IB (mA ) ON resistance Ron (W )