2SD2029 PANASONIC

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Technical content

Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1347 n Features l Satisfactory foward current transfer ratio hFE collector current IC characteristics l Wide area of safe operation (ASO) l High transition frequency fT l Optimum for the output stage of a HiFi audio amplifier n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 160 160 120 3.5 150 –55 to +155 Unit V V V A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE1 hFE2 * hFE3 V BE V CE(sat) fT C ob Conditions V CB = 160V, IE = 0 V EB = 3V , IC = 0 V CE = 5V , IC = 20mA V CE = 5V , IC = 1A V CE = 5V , IC = 8A V CE = 5V , IC = 8A IC = 8A, IB = 0.8A V CE = 5V , IC = 0.5A, f = 1MHz V CB = 10V , IE = 0, f = 1MHz min typ 210 max 200 1.8 2.0 Unit mA mA V V MHz pF *hFE2 Rank classification Rank Q S P hFE2 60 to 120 80 to 160 100 to 200 TC =25°C Ta=25°C Unit: mm 1:Base 2:Collector 3:Emitter TOP–3L Package 20.0–0.5 6.010.0 26.0–0.520.0–0.5 1.52.5 Solder Dip 10.9–0.5 123 2.0–0.3 3.0–0.3 1.0–0.2 5.0–0.3 3.0 4.02.0 5.45–0.3 0.6–0.2 1.5 2.7–0.3 1.5 2.0 f 3.3–0.2 3.0

PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C fT —I C C ob —V CB Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 200 150 100 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) Without heat sink (PC =3.5W) (1) (3)(2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 TC =25˚CIB=800mA 700mA 600mA 500mA 400mA 300mA 200mA 100mA 50mA Collector to emitter voltage VCE (V) Collector current IC (A) TC =–25˚C 25˚C 100˚C VCE =5V Base to emitter voltage VBE (V) Collector current IC (A) 0.1 1 10 1000.3 3 30 0.001 0.003 0.01 0.03 0.1 0.3 IC /IB=10 TC =100˚C –25˚C 25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 100 300 1000 3000 10000 VCE =5V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 0.1 0.3 100 300 1000 VCE =5V f=1MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 1 3 10 30 100 10000 1000 100 300 3000 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C ICP IC t=10ms 100ms DC Collector to emitter voltage VCE (V) Collector current IC (A)

R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 0.1 100 10000 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V · 0.3A (3W) and without heat sink (2) PT=10V · 1.0A (10W) and with a 100 · 100 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)