2SD2028 KEXIN
Document overview
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Technical content
Features
With Zener diode (11± 3V) between collector and base. Large current capacity. Low collector-to-emitter saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage, With Zener diode (11± 3V) V CBO 8V Collector-emitter voltage, With Zener diode (11± 3V) V CEO 8V Emitter-base voltage V EBO 5V Collector current I C 0.7 A Collector current (pulse) I CP 1.5 A Collector dissipation P C 200 mW Jumction temperature T j 150 Storage temperature T stg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current Ic BO VCB =6 V,I E = 0 100 nA Emitter cutoff current I EBO VEB =4 V,I C = 0 100 nA DC current Gain h FE VCE =2 V,I C = 50mA 200 900 Gain bandwidth product f T VCE =2 V,I C = 50mA 200 MHz Output capacitance C ob VCB = 5V , f = 1MHz 12 pF Collector-emitter saturation voltage V CE(sat) IC = 100mA , IB = 10mA 50 120 mV Base-emitter saturation voltage V BE(sat) IC = 100mA , IB = 10mA 0.8 1.2 V Collector-to-base breakdown voltage V (BR)CBO IC = 100ìA , IE =0 8 1 1 1 4 V Collector-to-emitter breakdown voltage V(BR)CEO IC = 100ìA , RBE = 81 1 1 4V Emitter-to-base breakdown voltage V(BR)EBO IE = 10ìA , IC =0 5 V hFE Classification Marking Rank 6 7 8 hFE 200 400 300 600 450 900 LT