2SD1999_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
www.kexin.com.cn 1 Tran sistors NPN Transistors 2SD1999 ■ Features
- Low saturation voltage.
- Large current capacity.
- Complementary to 2SB1325 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 4 Collector Current - Pulse ICP 6 Collector Power Dissipation PC 1.5 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 25 Collector- emitter breakdown voltage VCEO Ic= 10 mA， RBE= ∞ 20 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 6 Collector-base cut-off current ICBO VCB=20 V , IE= 0 1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=3 A, IB=150mA 0.5 Base - emitter saturation voltage VBE(sat) IC=3 A, IB=150mA 1.5 hFE(1) VCE= 2V, IC= 500mA 70 hFE(2) VCE= 2V, IC= 3 A 50 Diode forwad voltage VF IF=0.5A 1.5 V Base-to-emitter resistance RBE 1.5 KΩ Collector output capacitance Cob VCB= 10V, f=1MHz 45 pF Transition frequency fT VCE= 2V, IC= 500mA 200 MHz DC current gain V uA V ■ Marking Marking DN RBE Base Collector Emitter
www.kexin.com.cn2 Transistors NPN Transistors 2SD1999 ■ Typical Characterisitics VCE(sat) -- IC Collector Current, IC -- A 0.01 0.1 0.11.0 2 3 5 7 5753 2 3 C --25 C Ta=25 bC VBE(sat) -- IC Collector Current, IC -- A 3 75 0.11.0 2 3 5 7 2 3 5 2SD1999 IC / IB=20 1.0 2SD1999 IC / IB=20 75 C --25 C Ta=25 C Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V b b b b b Cob -- VCB Collector-to-Base Voltage, VCB -- V Output Capacitance, Cob -- pF 10 2 3 5 72 3 5 72 3 5 7 1001.00.1 100 2SD1999 f=1MHz DC Current Gain, hFE Collector Current, IC -- A hFE -- IC 100 0.01 0.1 1.07 2 3 5 7 2 3 5 7 2 3 5 Ta=75 bC --25 C 25 C 2SD1999 VCE=2V b b Collector-to-Emitter Voltage, VCE -- V A S O Collector Current, IC -- A 0.11.0 2 3 5 7 102 3 5 7 2 3 1.0 0.1 0.01 Ambient Temperature, Ta -- bC PC -- Ta Collector Dissipation, PC -- W 5710 1.8 25 50 75 100 125 150 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 ICP=6A IC=4A 10ms 1ms DC operation 100ms 2SD1999 Mounted on a ceramic board(250mm 2•0.8mm) 2SD1999 Ta=25 C Single pulse Mounted on a ceramic board(250mm 2• 0.8mm) (For PNP, minus sign is omitted) b