2SD1998_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
www.kexin.com.cn 1 Transistors NPN Transistors 2SD1998 ■ Features
- Low saturation voltage.
- Large current capacity.
- Complementary to 2SB1324 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 3 Collector Current - Pulse ICP 5 Collector Power Dissipation PC 1.5 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 40 Collector- emitter breakdown voltage VCEO Ic= 10 mA， RBE= ∞ 30 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 6 Collector-base cut-off current ICBO VCB= 30 V , IE= 0 1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=2 A, IB=100mA 0.5 Base - emitter saturation voltage VBE(sat) IC=2 A, IB=100mA 1.5 hFE(1) VCE= 2V, IC= 500mA 70 hFE(2) VCE= 2V, IC= 2 A 50 Diode forwad voltage VF IF=0.5A 1.5 V Base-to-emitter resistance RBE 0.8 KΩ Collector output capacitance Cob VCB= 10V, f=1MHz 40 pF Transition frequency fT VCE= 2V, IC= 500mA 100 MHz DC current gain V uA V ■ Marking Marking DM RBE Base Collector Emitter
www.kexin.com.cn2 Transistors NPN Transistors 2SD1998 ■ Typical Characterisitics