2SB1378 PANASONIC

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Technical content

Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1996 n Features l Low collector to emitter saturation voltage VCE(sat). l Optimum for low-voltage operation and for converters. l Allowing supply with the radial taping. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base MT1 Type Package 6.9–0.1 1.05 –0.05 2.5–0.1 3.5–0.114.5–0.5 (1.45) 0.80.7 4.0 0.15 0.85 0.8 1.0 0.65 max. 0.45 +0.1 –0.05 0.45 +0.1 –0.05 2.5–0.5 2.5–0.5 2.5–0.1 123 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –25 –20 – 0.5 600 150 –55 ~ +150 Unit V V V A A mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO ICEO V CBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) V BE(sat) fT C ob Conditions V CB = –25V, IE = 0 V CE = –20V , IB = 0 IC = –10mA, IE = 0 IC = –1mA, IB = 0 IE = –10mA, IC = 0 V CE = –2V , IC = –0.5A*2 V CE = –2V , IC = –1A*2 IC = –500mA, IB = –50mA*2 IC = –500mA, IB = –50mA*2 V CB = –10V , IE = 50mA, f = 200MHz V CB = –10V , IE = 0, f = 1MHz min –25 –20 typ 150 max –100 350 – 0.4 –1.2 Unit nA mA V V V V V MHz pF *1hFE1 Rank classification Rank Q R S hFE1 90 ~ 155 130 ~ 220 180 ~ 350 *2 Pulse measurement 1.2–0.1 0.65max. 0.45 0.1 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (HW type)

0 160 40 120 80 14020 100 60 800 600 200 500 700 400 100 300 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) –1.2 –1.0 – 0.8 – 0.6 – 0.4 – 0.2 Ta=25˚C –9mA –8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA IB=–10mA Collector to emitter voltage VCE (V) Collector current IC (mA ) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 –25˚C Ta=75˚C 25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=–25˚C 75˚C 25˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 600 500 400 300 200 100 VCE =–2V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 1 10 100 10003 30 300 320 240 200 280 160 120 VCB =–10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB