2SD1995 PANASONIC

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Technical content

Silicon NPN epitaxial planer type For low-frequency amplification n Features l High foward current transfer ratio hFE . l Low collector to emitter saturation voltage VCE(sat). l High emitter to base voltage VEBO . l Allowing supply with the radial taping. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base MT1 Type Package 6.9–0.1 1.05 –0.05 2.5–0.1 3.5–0.114.5–0.5 (1.45) 0.80.7 4.0 0.15 0.85 0.8 1.0 0.65 max. 0.45 +0.1 –0.05 0.45 +0.1 –0.05 2.5–0.5 2.5–0.5 2.5–0.1 123 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 100 400 150 –55 ~ +150 Unit V V V mA mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage Symbol ICBO ICEO V CBO V CEO V EBO hFE * V CE(sat) fT NV Conditions V CB = 20V , IE = 0 V CE = 20V , IB = 0 IC = 10mA, IE = 0 IC = 1mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 2mA IC = 10mA, IB = 1mA V CB = 10V , IE = –2mA, f = 200MHz V CE = 10V , IC = 1mA, GV = 80dB R g = 100kW , Function = FLAT min 400 typ 0.05 200 max 100 2000 0.2 Unit nA mA V V V V MHz mV *hFE Rank classification Rank R S T hFE 400 ~ 800 600 ~ 1200 1000 ~ 2000 1.2–0.1 0.65max. 0.45 0.1 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (HW type)

PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB NV — I C NV — V CE 0 160 40 120 80 14020 100 60 500 400 300 200 100 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 2 10826 4 160 120 100 140 Ta=25˚C 20mA 30mA 40mA 50mA 60mA 70mA 80mA 90mA 10mA IB=100mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 120 100 VCE =10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3

100 IC /IB=10

25˚C –25˚C Ta=75˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 1000 800 600 400 200 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 250 200 150 100 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 1 3 10 30 100 100 VCE =10V G V=80dB Function=FLAT Ta=25˚C 5kW R g=100kW 22kW Collector current IC (mA ) Noise voltage NV (mV ) 1 3 10 30 100 100 IC =1mA G V=80dB Function=FLAT Ta=25˚C 5kW R g=100kW 22kW Collector to emitter voltage VCE (V) Noise voltage NV (mV )