2SD1993

2SD1993 PANASONIC

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hFE 210 ~ 340 290 ~ 460 360 ~ 650 2SD1993 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification n Features l Low noise voltage NV . l High foward current transfer ratio hFE . l Allowing supply with the radial taping. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base MT1 Type Package 6.9–0.1 1.05 –0.05 2.5–0.1 3.5–0.114.5–0.5 (1.45) 0.80.7 4.0 0.15 0.85 0.8 1.0 0.65 max. 0.45 +0.1 –0.05 0.45 +0.1 –0.05 2.5–0.5 2.5–0.5 2.5–0.1 123 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 200 100 400 150 –55 ~ +150 Unit V V V mA mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage Symbol ICBO ICEO V CBO V CEO V EBO hFE * V CE(sat) fT NV Conditions V CB = 20V , IE = 0 V CE = 20V , IB = 0 IC = 10mA, IE = 0 IC = 2mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 2mA IC = 100mA, IB = 10mA V CB = 10V , IE = –2mA, f = 200MHz V CE = 10V , IC = 1mA, GV = 80dB R g = 100kW , Function = FLAT min 210 typ 200 max 100 650 1.0 150 Unit nA mA V V V V MHz mV *hFE Rank classification 1.2–0.1 0.65max. 0.45 0.1 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (HW type)

PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB NF — IE NV — I C 0 200 16040 120 80 500 400 300 200 100 Ta=25˚C Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 2 10826 4 120 100 Ta=25˚CIB=400mA 50mA 350mA 300mA 250mA 200mA 150mA 100mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 120 100 VCE =5V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

25˚C –25˚C Ta=75˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 1000 800 600 400 200 VCE =5V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 400 300 100 250 350 200 150 VCB =5V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) VCE =5V R g=1kW Ta=25˚C f=100Hz 10kHz 1kHz Emitter current IE (mA) Noise figure NF (dB) 0.01 0.03 0.1 0.3 1 120 100 VCE =10V G V=80dB Function=FLAT 5kΩ R g=100kW 22kΩ Collector current IC (mA) Noise voltage NV (mV )