2SD1992A PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1321A I Features

  • Low collector to emitter saturation voltage VCE(sat)
  • Allowing supply with the radial taping I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector to base voltage V CBO 60 V Collector to emitter voltage V CEO 50 V Emitter to base voltage V EBO 7V Peak collector current I CP 1A Collector current I C 500 mA Collector power dissipation P C 600 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = 20 V, IE = 0 0.1 µA ICEO VCE = 20 V, IB = 01 µA Collector to base voltage V CBO IC = 10 µA, IE = 06 0 V Collector to emitter voltage V CEO IC = 2 mA, IB = 05 0 V Emitter to base voltage V EBO IE = 10 µA, IC = 07 V Forward current transfer ratio h FE1 *2 VCE = 10 V, IC = 10 mA 85 340 hFE2 *1 VCE = 10 V, IC = 500 mA 40 90 Collector to emitter saturation voltage *1 VCE(sat) IC = 300 mA, IB = 30 mA 0.35 0.6 V Transition frequency f T VCB = 10 V, IE = −10 mA, f = 200 MHz 200 MHz Collector output capacitance C ob VCB = 10 V, IE = 0, f = 1 MHz 6 15 pF I Electrical Characteristics Ta = 25°C ± 3°C Unit: mm 6.9±0.1 1.05 ±0.05 2.5±0.1 3.5±0.114.5±0.5 (1.45) 0.80.7 4.0 0.15 0.85 0.8 1.0 0.65 max. 0.45 +0.1 −0.05 0.45 +0.1 −0.05 2.5±0.5 2.5 ±0.5 2.5±0.1 123 1.2±0.1 0.65max. 0.45 0.1 0.05 (HW Type) Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT1 Type Package Rank Q R S No-rank hFE1 85 to 170 120 to 240 170 to 340 85 to 340 Note) *1: Pulse measurement *2: Rank classification Product of no-rank is not classified and have no indication for rank.

PC  Ta IC  VCE IC  IB VCE(sat)  IC VBE(sat)  IC hFE  IC fT  IE Cob  VCB VCER  RBE 0 160 40 120 80 14020 100 60 200 600 400 800 100 500 300 700 Ambient temperature Ta (°C) Collector power dissipation PC (mW) 02 0 48 1 6 12 1826 1 4 10 800 700 600 500 400 300 200 100 IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 3 mA 2 mA 1 mA Collector to emitter voltage VCE (V) Collector current IC (mA) Ta = 25°C 01 0 86429 7531 800 700 600 500 400 300 200 100 Base current IB (mA) VCE = 10 V Ta = 25°C Collector current IC (mA) 0.01 0.01 0.1 100 0.1 1 10 0.03 0.3 0.03 0.3 3 Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (A) IC / IB = 10 25°C −25°C Ta = 75°C 0.01 0.01 0.03 0.1 0.03 0.3 100 0.1 0.3 1 3 10 Base to emitter saturation voltage VBE(sat) (V) Collector current IC (A) IC / IB = 10 Ta = 75°C 25°C −25°C 0.01 300 250 200 150 100 0.1 1 100.03 0.3 3 Forward current transfer ratio hFE VCE = 10 V Collector current IC (A) Ta = 75°C 25°C −25°C 240 200 160 120 −2 −20−5 −50 Transition frequency fT (MHz) Emitter current IE (mA) VCB = 10 V Ta = 25°C 3 10 30 10022 0 55 0 Collector output capacitance Cob (pF) Collector to base voltage VCB (V) IE = 0 f = 1 MHz Ta = 25°C 1 3 10 30 100 300 1000 120 100 Collector to emitter voltage VCER (V) Base to emitter resistance RBE (kΩ) IC = 2 mA Ta = 25°C

ICEO  Ta 102 103 104 0 200 1601208040 180 1401006020 VCE = 10 V Ambient temperature Ta (°C) ICEO (Ta) ICEO (Ta = 25°C)