2SD1964 PANASONIC

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Technical content

Silicon NPN epitaxial planar type For power switching n Features l Low collector to emitter saturation voltage VCE(sat) l Satisfactory linearity of foward current transfer ratio hFE l Large collector current IC l Full-pack package which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 130 150 –55 to +150 Unit V V V A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 hFE2 * hFE3 V CE(sat)1 V CE(sat)2 V BE(sat)1 V BE(sat)2 fT ton tstg tf Conditions V CB = 100V, IE = 0 V EB = 5V , IC = 0 IC = 10mA, IB = 0 V CE = 2V , IC = 0.1A V CE = 2V , IC = 3A V CE = 2V , IC = 8A IC = 7A, IB = 0.35A IC = 15A, IB = 1.5A IC = 7A, IB = 0.35A IC = 15A, IB = 1.5A V CE = 10V , IC = 0.5A, f = 1MHz IC = 7A, IB1 = 0.7A, IB2 = – 0.7A, V CC = 50V min typ 0.5 2.0 0.2 max 260 0.5 1.5 1.5 2.5 Unit mA mA V V V V V MHz ms ms ms *hFE2 Rank classification Rank Q P hFE2 90 to 180 130 to 260 TC =25°C Ta=25°C Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0–0.2 5.5–0.2 7.5–0.2 16.7–0.3 0.7–0.1 14.0–0.5 Solder Dip 4.0 0.5 +0.2 –0.1 1.4–0.1 1.3–0.2 0.8–0.1 2.54–0.25 5.08–0.5 213 2.7–0.2 4.2–0.2 4.2–0.2 f3.1–0.1

PC —T a I C —V CE V CE(sat)—I C V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) With a 50 · 50 · 2mm Al heat sink (4) Without heat sink (PC =2W) (1) (2) (3) (4) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 TC =25˚C IB=300mA 200mA 140mA 100mA 80mA 60mA 40mA 20mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.1 1 100.3 3 0.01 0.1 0.03 0.3 IC /IB=10 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 100.3 3 0.01 0.1 0.03 0.3 (1) IC /IB=10 (2) IC /IB=20 TC =25˚C (1) (2) Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 TC =–25˚C 25˚C 100˚C IC /IB=10 Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.1 30 1010.3 3 100 300 1000 VCE =10V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 0.1 0.3 100 300 1000 VCE =10V f=1MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 08 26 4715 3 0.01 0.1 0.03 0.3 tstg tf ton Pulsed tw =1ms Duty cycle=1% I C /IB=10 (IB1=–IB2) VCC =50V TC =25˚C Collector current IC (A) Switching time ton,tstg,tf (ms) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C 10ms t=1ms DC ICP IC Collector to emitter voltage VCE (V) Collector current IC (A)

R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 0.1 100 10000 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V · 0.2A (2W) and without heat sink (2) PT=10V · 1.0A (10W) and with a 100 · 100 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)