2SB1296 SANYO
Document overview
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Technical content
Features
. Large current capacity « Low collector to emitter saturation voltage + Wide ASO ( ): 28B1296 Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vopo (-)15 v Collector to Emitter Voltage Veg (=) 15 v Emitter to Base Voltage Vepo (-)5 v Collector Current Ig (-)0.8 A Collector Current(Pulse) Icp (-)3 A Collector Dissipation Po 300 = mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Topo Vop>(-) 12V, 1g=0 (=)100 nA Emitter Curoff Current Ippo Vepe(-)4V,Ig=0 (-)100 nA DC Current Gain bre(1) Vop=(-)2V,Ig=(~)50mA 1408 (560)* 800# h, Vop=(-)2V,Ip=(-)800mA 80 FE(2 CE’ 9° C' Gain-Bandwidth Product fr (2) Vog=(-)2V,I¢=(-)50mA (300) MHz 200 Output Capacitance Cop Vop2(-) 10V, f= 1MHz (15)10 pF Continued on next page. *: The 2SB1296/2S8D1936 are classified by 50mA hpg as follows:
2881296 J140 S260 200 T 4007 | 280 U 560 J
28D 1936 1408 280 200 T 400 280 U_ 560 400 Vv 800 Package Dimensions 2033 (unit: mm) a2 : i nn - a0 See iY 44 a ee ae PT 3 or B: Base C: Collector E: Emitter SANYO: SPA SANYO Electric Co.,Ltd. Semiconductor Business Headquarters - TOKYO. OFFICE. Tokyo Bidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 4207TA,TS No.2468-1/4
Continued from preceding page. min typ max unit C-E Saturation Voltage V, Ip=(-)5mA, Ip=(-)0.5mA (-)10 (-)25 9 mV Vor (est)? Tg=(-)4oOmA I p= (~)20mA (-)100(-)200 mv B-E Saturation Voltage Vpp(gat) Ic=(-)400mA,Tp=(-)20mA —(~)0.9(-)1.2-V C-B Breakdown Voltage Voprycpo Ic=(-) 107A, 1p=0 (-)15 v C-E Breakdown Voltage V(pr)cgo Ic=(-) 1mA, Rgp=co (-)15 v - E-B Breakdown Voltage V(BR)EBO Tee (-)10uA,Ee=0 (-)5 v cal TTT ON ae ZsB1296 head Y Za ee ZEv1936 ayer = * al Yor | | i | al EAs eee | TIT) FL en TT ; Ve Pa Pott | | LIWALLS Tr) LOpe MPa soy er ay SSS Oy Po a Zane aii ii tt a 46 1 ay Pf A eel " coulector to ‘pmitter Voltage, Vop “Vv Collector to Emitter Voltage,Vog - V = fee a = aa ZsBt296 pres. 25019
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ou | NI ‘ Ne ay 20) A 200 N gq 1) IN TT I & te} . got) TN I sat tT TRE | coo aN a4 IN ee 9 a 8 8 8 ne 0 Ambient Temperature,Ta - °C MM No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTO., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ~ @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. WM Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of . third parties. ee >No. 2468=4/4 °