2SB1295 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

. Large current capacity - Low collector to emitter saturation voltage - Very small-sized package permitting sets to be made smaller and slimer ( ): 2881295 Absolute Maximum Ratings at Ta=25°C unit. Collector to Base Voltage Vopo (-)15 Vv Collector to Emitter Voltage Vox (=)15 v Emitter to Base Voltage Vepo (-)5 Vv Collector Current Ig (-)0.8 A Collector Current(Pulse) Iop (=)3 A Collector Dissipation Po 200 «ooW Junction Temperature Tj 150 °C Storage Temperature Tstg ~55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Ico Vope(-) 12V, 1p=0 (-)100 nA Emitter Curoff Current Ingo Vep=(-)4V,I¢=0 (-)100 9 nA DC Current Gain bep(1) Vop=(-)2V,1¢=(-)50mA 135% 900# (600) hy, Vop=(-) 2V,Ip=(-)800mA 80 FE(2 CE Cc Gain-Bandwidth Product fp (2) Vog=(-)2V,Ig=(-)50mA 200 MHz (300) Output Capacitance Cop Voge(-) 10V, f= 1MHz (15)10 pF Continued on next page. #: The 2SB1295/28D1935 are classified by 50mA hpp as follows: 2sp1295 [135 5 270 [ 200 6 400 28D1935 [135 5 270 | 200 6 400 [ 300 7 600 Marking : 2SB1295:UL/2SD1935:CT Package Dimensions 2018A hpp rank: 2SB1295:5,6,7/2SD1935:5,6,7,8 (unit:mm) by O16 c Tt . an an 8 B. 4 pes bee C: Collector B:; Base | ] E; Emitter 0-4 SANYO: CP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 4207TA,TS No.2516~1/4

Continued from preceding page. in t tt min yp max un. C-E Saturation Voltage V, Tp=(~)5mA,Ip=(-)0.5mA (-)10 (-)25 0 mv me Veg(eatys Z¢=(-)400mAeTp=(=)20mA (=) 100(-)200 a B-E Saturation Voltage Vpp(sat) Ic=(-)400mA,Ip=(~)20mA (-)0.9(-)1.2 0 V C-B Breakdown Voltage Vopr)cpo I¢=(-)10HA,I,=0 (-)15 v C-E Breakdown Voltage Vpr)cgoq Ip=(-) 1mA, Rppeoo (-)15 v E-B Breakdown Voltage V(BR)EBO Tp=(~) 10pA, Ig=0 (-)5 Vv

200 Ic _- VcE : 100 Ic - Ver

pw | ides] RZ Pn S/S pepe > | HA 2 Wh; 2 -500 @ 500 Eo WW Feat Wet tT Tt Wy) 3 iy an SH pif y 8

70 Ae a Za

coe) /A hii Wi ttre TTT] Vit tes TTT TT Collector to Emitter Voltage, Voy -v Collector to Emitter Voltage, Voz -Vv -200 Toma cr ™ Se 2: Cn: - $1935 | real cere tt CT 2 oll CT oa ee Pt tt | PSSEeCLe epee | aoee I TT yt a°rT PT rrr rr) att a 8 { 3 Kies oL | ted [ TT Ty | oLLiaol | TPT TT = - = = - 4 5 * wortestor to Emitter Voltage. Von - v ° collector to Emitter Toltese, Yop -v IC ~ VBE Ic - VBE “— 2851295 ‘on 2501935 ‘TT eT ee 1-80 ] ed an [ER ARERR! Sa fa Lo eae 400 & 400 H al UT) TTT 8 an L 2 = | PLU YT TA LZ Base ‘to’ Emitter Voltage, Vpp - V Base to Emitter Voltage, Vpp -v No.2516-2/4

2$B1295/2SD1935 a hre - Ic hre - Ic TRE es) “He Thee Vice=-2v Tae Vce=2v . ip) Lasse pie og Teese § , eee ST q ae SN LOTTA fe EN \\ z a_LTTTTITP EN) = “OTT CoN 8 tl] TP Ty rr Sgt tT itt Pi eTTTUT TUT Ty 6 ® Je Seas x At ttit ttt yt TT alti? ett TU TS 49 23 5 4 2 3 5 ap FSS TS 99 273 5 wy 23 5 op Collector Current,I¢ ~ mA Collector Current,I, ~ mA = 00 Vce(sat) - Ic cco Vce(sat) - I¢ - mceeman a OS ‘4 SE ef tae ‘ EEE eran ¢L0P Te ot) & Pa rs eB 5 At Reo tl Tt PA se LT TT A @ ooo wg BPC a ge Ji Pe Tt | s& TTT eg TT 58 toc Ya PP tt 53 tt (Se Per) 8 tit eee yearn a

88 Doe) 88 eee eee

S 5% 23 Tm? 3 5 Tap Y S749 23 STi 2 3 5 Te 2 Collector Current ,I¢ - ma Collector Current ,I¢ - mA Ce Soot f

3 LU TTT |- \\e7 18-20 3 a 2A

: PEE PT edi Tit Tt tit | Bod LT Be -t0 tI = $30 ie SS Za. Les esta eet | | ge | Death eee = pop ee | ag Ceo ae HTT Se tT LTA TT TT es 4 gs 3 as TUT TTT TP) gs COT E} Ty 23 5 79 2 3 5 Tig 2 35 749 23 57Tw@ 2 3 5 74000 2 Collector Current ,I¢ - pA Collector Current ,I¢ -m cob - Vcp ft - I¢ «| Tl 238 129572801935 TT I |_|] esevess7asoi935 “ 7 f=1MHz ’ 7 VCE=2v get tf ft e Ji | joo é 3 Pi] PRK eg UT Lee CN] :° E a | A aa ft Wu #40 — a 100 Bi pe ° 8 | cor pur, etme atgn'as omitted.) 5 57 10 203 5 7 0 2 T 9 2 3 57m 2 3 5 Tig Collector to'Base Voltage, Vop - V ‘Collector Current,I¢ - mA —____SeHlector te'Base VoltagenVop ~ V_CoDector Current yg - mk : No.2516-3/4

Pc - T, 240 cota z an 2881295/2801935 " 200 S fo iN g 160 & 120 Hy a . a" HHH § ~ ry 3 40 ~S gy NX ° 20 40 60 co 100 120 «140 160 Ambient Temperature,Ta - °C INo products described or contained herein afe intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power contro! systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees ate made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.2516—4/4