2SD1935_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors NPN Transistors 2SD1935 ■ Features
- Large current capacity.
- Low collector to emitter saturation voltage.
- Complimentary to 2SB1295 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 15 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 800 mA Collector Current - Pulse ICP 3 A Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 15 Collector- emitter breakdown voltage VCEO Ic= 1 mA， RBE= ∞ 15 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 12 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 IC=5 mA, IB=0.5mA 10 25 IC=400 mA, IB=20mA 100 200 Base - emitter saturation voltage VBE(sat) IC=400 mA, IB=20mA 0.9 1.2 V VCE= 2V, IC= 50mA 135 900 VCE= 2V, IC= 800mA 80 Collector output capacitance Cob VCB= 10V, IE=0,f=1MHz 10 pF Transition frequency fT VCE= 2V, IC= 50mA 200 MHz DC current gain hFE V uA Collector-emitter saturation voltage VCE(sat) mV ■ Classification of hfe(1) Type 2SD1935-CT5 2SD1935-CT6 2SD1935-CT7 2SD1935-CT8 Range 135-270 200-400 300-600 450-900 Marking CT5 CT6 CT7 CT8 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 1. Base 2. Emitter 3. Collector 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1
www.kexin.com.cn2 Transistors NPN Transistors 2SD1935 ■ Typical Characterisitics
www.kexin.com.cn 3 Tran sistors NPN Transistors 2SD1935 ■ Typical Characterisitics