2SD1918_15 KEXIN

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  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SD1918 ■ Features

  • High breakdown voltage.
  • Low collector output capacitance.
  • High transition frequency
  • Complementary to 2SB1275 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160 Collector - Emitter Voltage VCEO 160 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1.5 Collector Current - Pulse ICP 3 Collector Power Dissipation Tc = 25℃ 10 Ta = 25℃ 1 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A PC W ■ Electrical Characteristics Ta = 25℃ ■ Classification of hfe(1) Type 2SD1918-Q 2SD1918-R Range 120-270 180-390 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 160 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 160 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 5 Collector-base cut-off current ICBO VCB= 120 V , IE= 0 1 Emitter cut-off current IEBO VEB= 4V , IC=0 1 Collector-emitter saturation voltage VCE(sat) IC=1 A, IB=100mA 2 Base - emitter saturation voltage VBE(sat) IC=1 A, IB=100mA 1.5 DC current gain hFE VCE= 5V, IC= 100mA 120 390 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 20 pF Transition frequency fT VCE= 5V, IE= -100 mA,f=1MHz 80 MHz V uA V

www.kexin.com.cn2 Transistors NPN Transistors 2SD1918 ■ Typical Characterisitics Ta=25°C 0 1 2 3 4 5 0.2 0.4 0.6 0.8 1.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) Fig.1 Ground emitter output characteristics 10mA 9mA 7mA 6mA 5mA 4mA 3mA 2mA IB=1mA 8mA VCE=5V BASE TO EMITTER VOLTAGE : VBE (V) Fig.2 Ground emitter propagation characteristics COLLECTOR CURRENT : IC (A) 0.02 0.05 0.1 0.2 0.5 0.01 Ta=100°C Ta=25°C Ta= −25°C Ta=25°C 1000 500 200 100 COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE Fig.3 DC current gain vs. collector current ( 1 ) VCE=10V VCE=5V 1000 500 200 100 COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE Fig.4 DC current gain vs. collector current ( 2 ) Ta=100°C 25°C −25°C Ta=25°C 0.2 0.5 0.1 0.01 0.02 0.05 COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.5 Collector-emitter saturation voltage vs. collector current IC/IB=20 IC/IB=10 0.2 0.5 0.1 0.01 0.02 0.05 COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) Fig.6 Collector-emitter saturation voltage Base-emitter saturation voltage vs. collector current Ta= −25°C 25°C −25°C VBE(sat) VCE(sat) 100°C VCE=5V 1000 500 200 100 EMITTER CURRENT : IE (mA) TRANSITION FREQUENCY : fT (MHz) Fig.7 Gain bandwidth products vs. emitter current Ta=25°C f=1MHz IE=0A 0.1 0.2 0.5 1 2 5 10 20 50 100 1000 500 200 100 COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Fig.8 Collector output capacitance vs. collector-base voltage Ta=25°C Ta=25°C ̷Single nonrepetitive pulse COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area (2SD1918) COLLECTOR CURRENT : IC (A) 0.1 0.2 0.5 21 5 10 20 50 100 200 500 1000 200m 500m 100m 10m 20m 50m Ic Max (Pulse̷) DC Pw=100ms̷ Pw=10ms