2SB1268 SANYO
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« Suitable for sets whose height is restricted - Low collector to emitter saturation voltage ( ): 28B1268 Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vopo (-)60 Vv Collector to Emitter Voltage Vong (-)50 Vv Emitter to Base Voltage Vepo (-)6 ov Collector Current Ig (-)5 A Peak Collector Current lop (-)9 A Collector Dissipation Po 1.65 W Te=25°C 30 OW Junction Temperature Tj 150% Storage Temperature Tstg “55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Topo Vope(-)40V,I_=0 (-)0.1 9 mA Emitter Cutoff Current Ippo Vpp=(-)AV,Ig=0 (-)0.1 9 ma DC Current Gain bep(1) Vogz(-)2V,Ig=(-) 1A 708 280* hep(2) Vop#(-)2V,Ig=(~)3A 30 Gain-Bandwidth Product fy Voge (-)5V,Ig=(-) 1A 30 MHz Output Capacitance Cob Voge (-) 10V, f= MHz, 100 pF (160) C-E Saturation Voltage Vog(sat) Ic=(-)3A,Tp=(-)0.3A (-)0.4 ov C-B Breakdown Voltage V(BR) CBO Tg=(-) 1m ,fa=0 (-)60 v C-E Breakdown Voltage V(pr)cEO Ig=(-) 1mA, Rpp=00 (-)50 Vv E-B Breakdown Voltage V(pR)EBO Ig=(-) mA, Ig=0 (-)6 Vv Continued on next page. Package Dimensions 20498 (unit: mm) . ~ 09. 8.8 10 hae gs = PS 8 8 35 ~ (9b E; Emitter C: Collector
4 B: Base
SANYO: TO-220MF SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN D251MH/3309TA/4177TA,TS No.2264—1/4
Continued from preceding page. min typ max unit Turn-on Time ton See specified Test Circuit. 0.1 ys Storage Time tstg " (0.7) 1.4 ys Fall Time te . 0.2 ps " #: The 28B1268/2S8D1904 are classified by 1A hp, as follows: Switching Time Test Circuit (For PNP, the polarity is reversed.) Jer Pwaz0us =— nee 1p? OUTPUT INPUT sof” | too 1Otgi=~0lgzzhc = 2A qy ip Vee -SV Yoc“20V Unit (resistance: 9, capacitance: F) “10 Ic - Ve 0 Ic - Vee & 1268 < | | Se Si . SSSoe Zep t904 p-8 Z SF e0nk. 4e f ¢ . £ -~6 Uy Yi F B Ys ZIT _hioose i 2 aan 8 | A sons Po Zao 8 / 3'/ (AGREE 4a ° 04 -0-8 12 1-6 2.0 26 °O 04 08 12 1.6 20 roo Collector to Emitter Voltage,Vog ~ V Collestor to Emitter Voltage, Vog - V a0 Te - VBE ‘0 Ic - VBE eee) ee -9 VcE=-2v 9 VCE=2V a ee a Ty] fT et | | [Tyr tT ) og, gq] | T yA tl Be ee oe i Ei | TT BH | | i a es og sg.) | | Tevet TT g- [ [ Tey t T Bj i | [7 t toy fy yy sp) | Ya tT to} 8 ToT yy Tr n,n tlt sy | [| 0 -02 -04 -06 -08 10 —12 —14 0 02 OF O06 O08 10 12 16 Base to Emitter Voltage, Vpp - V Base to Emitter Voltage, Vpp - V No.2264-2/4
2SB1268/2SD1904 . =o =o 2881268 2801904 eed eee £ Ltesaotl TTT {itt E ieee} EP Tt TT 3 ee ET A Heese pee ee ee NG oT ore TSN SER RENN POO PER BEDE Eee oe Nee eee “CRE CE Oo -04 10 ~10 or 01 10 10 Collector Current ,I¢ ~A Collector Current I -A ‘> 0 Vce(sat) - Ic — > 0 Vce(sat) - Ic — eee pes a a a OO Bool} Pere tte to es HPP Te se FE gt] TT Al) ae tor tT Tr Try P| So ieee ST oo s* 1 1 Tae) 8 TOC an ss Litt iPA Yt | 32 [TT TT A || ee eee cee er A a $8 off? 1 ||] TTT TT] 3s,, Po yy Collector Current ,Zg -. Collector Current Ig 1” 3 2 0 g peered Heed a OD Ee worl. | | Tit Prt yy oy) ge iit | itt Tir) se Str oy es oe 2 ree & Ar BF os ‘A 2 a, we |_| Peel se > 4: = g $4 of] 1 TTT TE aa, CITT TTT fe] 04 1.0 10 5 Collector Current,Ip - A collector Current,Ig = A ° ooo oo Sisenisaniia iB plneitecises a z ae ; Pee TP ee ty A PEP PT HATTIE i oe za Care | as Beet 7 7 HA é LT TTT TT Ty et Py) Oe es a 4a {TT TTT TTT Tt } aa Ter Collector, Current, Ig -a coliector Gurrent,Ig- 4” No.2264-3/4
ee: ES ASO a ASO Lie | Tt] pers [TT LTT TT F079 « “0b 1 ee Oh cm oO HH wT)
4 Cote EC ee ee NEE
2 {iT TT TNAN TTT og DTT OTT PRA LT
3 Jy TT PANN ks CE g git TT Tra TT
Boot tT TTT PRN ELE NAT TT “10 % BLO &. a a oF TT TTT AW VT & aia § OPT eS gs Se eee gC aw To ia 2 aN 3 | fT Pr Na fe 3 at] Trier TIT os {ims to 100ms: single pulse Ril oy [1s to 100ms: single pulse Raa =e =10 100 10 5 T9 700 Collector to Emitter Voltage,Vop - V Collector to Emitter Voltage,Vop - V
20 Pc - Ta ® Pc - Ta
= | 2881268/2501904 = (1. | ps 268/2801904 ip oe Can NX ae) é iN gf. INT TT Bie “25 P<—e 3 4, rs %, & q & Key 7 < ad * 5 as Ne Pe | PN TT a” Ree a. Ne F Rr] ooo Reo Sw go ei [| tT INT g NX a, 8 i $b ab th a IN rd 0 20 40 Cy 60 ‘oO 120 oO 160 Ambient Temperature,Ta - Ambient Temperature,Ta - °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the lke, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products desoribed or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.2264-4/4