2SB1267 SANYO
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- Manufacturer or author: Provided By digicamel.com
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+ Suitable for sets whose height is restricted . Low collector to emitter saturation voltage: Von(sat)=-0-5V(PNP), O.4V(NPN) max : . Large current capacity : ( ): 28B1267 Absolute Maximum Ratings at Ta=25°C unit Collector-to-Base Voltage Vopo (-)60 v Collector-to-Emitter Voltage Veg (-)30 v Emitter-to-Base Voltage VEBo (-)6 ov Collector Current Ig (-)8 A Peak Collector Current dop (-)15 A Collector Dissipation Po 1.65 W Te=25°C 30 OW Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Electrical Characteristics at Ta=25°C nmin typ max unit Collector Cutoff Current Igo Voge (-)40V, 1,20 (-)0.1 mA Emitter Cutoff Current Ippo Vppz(-)4V,Ig=0 (-)0.1 0 mA DC Current Gain bpp) Voge (-)2V,I¢=(-) 1A 70* 280* hpp(2) Vogt (-)2V,Ig=(-)4a 30 Gain-Bandwidth Product fy Vogz(-)5V,Ig=(-) 1A 120 MHz C-E Saturation Voltage Vor(sat) Tg=(-)3A,1p=(-)0. 158 0.4 v (-0.5) C-B Breakdown Voltage V¢pr)cpo Ic=(-) mA, Tp=0 (-)60 v C-E Breakdown Voltage Vepnocep Ig=(=)1mA,Rpp=co = (=) 30 v E-B Breakdown Voltage V(pr)epo Zp=(-) 1mA,Ip=0 (-)6 v Continued on next page. Package Dimensions 20498 (unit: mm) 0.9 8.8 11.0 2.7 Sta rT. toa et Li. ~ (8.6 E: Emitter a . C: Collector e B: Base SANYO: TO-220MP SANYO Electric Co.,Ltd.: Semiconductor Business Headquarters A TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN % D251MH/5137TA,TS No.2263—~1/4
Continued from preceding page. Turn-on Time ton See specified Test Circuit. min on me en Fell Tine 42° . rsh f . ps #: The 2SB1267/2SD1903 are classified by 1A hep as follows: Switching Time Test Circuit 181 SLR Eee "ee ——© OUTPUT ° INPUT 50 10 rf 2B . —§—. 20 Ipit-20lgg tc = 4A yoo" 0p (For PNP, the polarity is reversed.) i Unit (resistance: 9, capacitance: F) VeE* —5¥ Vec=10v Ic - V Ic - . Sa ee Z22= = oe) Zee ee eae o} Zouwencoe le | comaneane ° A (oT ie Collector-to-Emitter Voltage,Vog - V Collector-to-Emitter Voltage, Vog - V Ic _- VBE Ic - VBE 4, |VCE=-2V A <4/VCE=2V on PP PA os, ia ae go tit) Yi t eff tt 7 Eg a A | sept | ti ZiT | ft tp Pty ep TAT | ¢.-f tp Pv y poser cane Roser aces °9 0.2 -04 =o =10 12 -14 —1.6 °6 02 04 06 4 10 12 16 4.6 Base-to-Emitter Voltage, Vp ~ V Base-to-Emitter Voltage, Vpp - V SSeS No.2263— 2/4
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6 9) 74) w BO oo 0 0 Ko 5 0 20-6080 ROTH a T6O Ambient Temperature,Ta - °C Ambient Temperature,Ta - °C I No products descrived or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. MW Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and tigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Ml Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, eee No.2263~4/4