2SD1892 SAVANTIC

Document overview

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Technical content

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1892

DESCRIPTION

  • With TO-220Fa package
  • High DC current gain
  • Low collector saturation voltage
  • DARLINGTON
  • Complement to type 2SB1252

APPLICATIONS

  • Power amplification
  • Optimum for 35W high-fidelity output PINNING PIN DESCRIPTION

1 Base

2 Collector

3 Emitter

Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A ICM Collector current-peak 8 A TC=25 45 PC Collector power dissipation Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220Fa) and symbol

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1892 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=30mA ; IB=0 100 V VCEsat Collector-emitter saturation voltage I C=4A ;IB=4mA 2.5 V VBEsat Base-emitter saturation voltage I C=4A ;IB=4mA 3.0 V ICBO Collector cut-off current V CB=120V; IE=0 100 µA ICEO Collector cut-off current V CE=100V; IB=0 100 µA IEBO Emitter cut-off current V EB=5V; IC=0 100 µA hFE-1 DC current gain I C=1A ; VCE=5V 2000 hFE -2 DC current gain I C=4A ; VCE=5V 5000 30000 fT Transition frequency I C=0.5A ; VCE=10V;f=1MHz 20 MHz Switching times ton Turn-on time 2.5 µs ts Storage time 3.5 µs tf Fall time IC=4A; VCC=50V IB1=-IB2=4mA 1.0 µs hFE-2 Classifications Q P 5000-15000 8000-30000

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1892 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)