2SD1824 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
Silicon NPN epitaxial planer type For low-frequency amplification n Features l High foward current transfer ratio hFE . l Low collector to emitter saturation voltage VCE(sat). l High emitter to base voltage VEBO . l S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Emitter EIAJ:SC–70 3:Collector S–Mini Type Package 2.1–0.1 1.3–0.10.9–0.1 0.7–0.1 0.3 +0.1 –0 0.15 +0.1 –0.05 2.0–0.2 0.650.2 0.65 0 to 0.1 0.2–0.1Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 100 100 150 150 –55 ~ +150 Unit V V V mA mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Symbol ICBO ICEO V CBO V CEO V EBO hFE * V CE(sat) fT Conditions V CB = 60V , IE = 0 V CE = 60V , IB = 0 IC = 10mA, IE = 0 IC = 1mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 2mA IC = 10mA, IB = 1mA V CB = 10V , IE = –2mA, f = 200MHz min 100 100 400 typ 0.05 max 100 1200 0.2 Unit nA mA V V V V MHz Marking symbol :1V *hFE Rank classification Rank R S hFE 400 ~ 800 600 ~ 1200 Marking Symbol 1VR 1VS
PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB NV — I C NV — V CE 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 2 10826 4 Ta=25˚C 20mA 30mA 40mA 50mA 60mA 80mA 10mA IB=100mA Collector to emitter voltage VCE (V) Collector current IC (mA ) VCE =10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3
100 IC /IB=10
25˚C –25˚C Ta=75˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 1800 1500 1200 900 600 300 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 200 160 120 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.01 003 0.1 0.3 1 100 VCE =10V G V=80dB Function=FLAT Ta=25˚C 5kW R g=100kW 22kW Collector current IC (mA ) Noise voltage NV (mV ) 1 3 10 30 100 100 IC =1mA G V=80dB Function=FLAT Ta=25˚C 5kW R g=100kW 22kW Collector to emitter voltage VCE (V) Noise voltage NV (mV )