2SD1821 PANASONIC
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Technical content
hFE 130 ~ 220 185 ~ 330 2SD1821 PR PS 2SD1821A LR LS 2SD1821, 2SD1821A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification n Features l High collector to emitter voltage VCEO . l Low noise voltage NV . l S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Emitter EIAJ:SC–70 3:Collector S–Mini Type Package 2.1–0.1 1.3–0.10.9–0.1 0.7–0.1 0.3 +0.1 –0 0.15 +0.1 –0.05 2.0–0.2 0.650.2 0.65 0 to 0.1 0.2–0.1 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 150 185 150 185 100 150 150 –55 ~ +150 Unit V V V mA mA mW 2SD1821 2SD1821A 2SD1821 2SD1821A n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage Symbol I CBO V CEO V EBO hFE * V CE(sat) fT C ob NV Conditions V CB = 100V, IE = 0 IC = 100mA, IB = 0 IE = 10mA, IC = 0 V CE = 5V , IC = 10mA IC = 30mA, IB = 3mA V CB = 10V , IE = –10mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHz V CE = 10V , IC = 1mA, GV = 80dB R g = 100kW , Function = FLAT min 150 185 130 typ 150 2.3 150 max 330 Unit mA V V V MHz pF mV 2SD1821 2SD1821A *hFE Rank classification Marking symbol :P(2SD1821) L(2SD1821A) Marking Symbol
Transistor 2SD1821, 2SD1821A PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 6 41 2 81 421 0 6 120 100 Ta=25˚C 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA IB=2.0mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 120 100 VCE =10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3
100 IC /IB=10
25˚C –25˚C Ta=75˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 600 500 400 300 200 100 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 200 160 120 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)