2SD1821 KEXIN
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Technical content
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High collector-emitter voltage VCEO Low noise voltage NV Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 150 V Collector-emitter voltage V CEO 150 V Emitter-base voltage V EBO 5V Peak collector current I CP 100 A Collector current I C 50 A Collector power dissipation P C 150 mW Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter voltage V CEO IC = 100 ìA, IB = 0 150 V Emitter-base voltage V EBO IE =1 0ì A ,IC =0 5 V Collector-base cutoff current I CBO VCB = 100 V, IE =0 1 ì A Forward current transfer ratio h FE VCE =5V ,I C = 10 mA 130 330 Collector-emitter saturation voltage V CE(sat) IC =3 0m A ,IB =3m A V Transition frequency f T VCB =1 0V ,IE = -10 mA, f = 200 MHz 150 MHz Collector output capacitance C ob VCB =1 0V ,IE =0 ,f=1M H z 2 . 3 p F Noixe voltage NV VCE =1 0V ,IC =1m A ,GV =8 0d B ,Rg = 100KÙ, Function = FLAT 150 mV hFE Classification Marking Rank Q R hFE 130 220 185 330 P