2SD1820A_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SD1820A ■ Features

  • Low Collector-to-Emitter Saturation Voltage
  • Complementary to 2SB1219A

1 Base

2 Emitter

3 Collector

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5 Collector Current - Pulse ICP 1 Collector Power Dissipation PC 150 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 2 mA， IB= 0 50 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 50 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=300mA, IB=30mA 0.35 0.6 Base - emitter saturation voltage VBE(sat) IC=300mA, IB=30mA 1.2 hFE(1) VCE= 10V, IC= 150mA 85 340 hFE(2) VCE= 10V, IC= 500 mA 40 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 6 15 pF Transition frequency fT VCE= 10V, IE= -50 mA,f=200MHz 200 MHz DC current gain V V uA ■ Classification of hfe(1) Type 2SD1820A-Q 2SD1820A-R 2SD1820A-S Range 85-175 120-240 170-340 Marking XQ XR XS

www.kexin.com.cn2 Transistors NPN Transistors 2SD1820A ■ Typical Characterisitics PC IaT — C — VCE IC — I B VCE(sat) — I C VBE(sat) — I C hFE — I C fT — I E Cob — VCB VCER — R BE 0610 40 12080 14020 10060 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW) 020 164 128 800 600 200 500 700 400 100 300 Ta=25˚C IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA Collector to emitter voltage VCE (V) Collector current IC (mA) 010 82 64 800 600 200 500 700 400 100 300 VCE=10V Ta=25˚C Base current IB (mA) Collector current IC (mA) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3

100 IC/IB=10

25˚C –25˚C Ta=75˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 Ta=–25˚C 25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 300 250 200 150 100 VCE=10V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 240 200 160 120 VCB=10V Ta=25˚C Emitter current IE (mA) Transition frequency fT (MHz) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 1 10 100 10003 30 300 120 100 IC=2mA Ta=25˚C 2SD1820A Base to emitter resistance RBE (kΩ) Collector to emitter voltage VCER (V)