2SD1820A KEXIN
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Technical content
Features
Low collector-emitter saturation voltage VCE(sat). Silicon NPN Epitaxial Planar Type 2SD1820A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 60 V Collector-emitter voltage V CEO 50 V Emitter-base voltage V EBO 5V Collector current I C 500 mA Peak collector current I CP 1A Collector power dissipation P C 150 mW Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage V CBO IC =1 0ì A ,IE =0 6 0 V Collector-emitter voltage V CEO IC =2m A ,IB =0 5 0 V Emitter-base voltage V EBO IE =1 0ì A ,IC =0 5 V Collector cutoff current I CBO VCB =2 0V ,IE =0 0 . 1 ì A Forward current transfer ratio h FE VCE =1 0V ,IC = 150 mA 85 340 Collector-emitter saturation voltage V CE(sat) IC = 300 mA, IB = 30 mA 0.35 0.6 V Transition frequency f T VCB =1 0V ,IE = -50 mA, f = 200 MHz 200 MHz Collector output capacitance C ob VCB =1 0V ,IE =0 ,f=1M H z 6 1 5 p F hFE Classification Marking XQ XR XS X Rank Q R S No-rank hFE 85 170 120 240 170 340 85 340