2SD1820 PANASONIC
Document overview
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Technical content
2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1219 and 2SB1219A n Features l Low collector to emitter saturation voltage VCE(sat). l S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Emitter EIAJ:SC–70 3:Collector S–Mini Type Package 2.1–0.1 1.3–0.10.9–0.1 0.7–0.1 0.3 +0.1 –0 0.15 +0.1 –0.05 2.0–0.2 0.650.2 0.65 0 to 0.1 0.2–0.1 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 500 150 150 –55 ~ +150 Unit V V V A mA mW 2SD1820 2SD1820A 2SD1820 2SD1820A n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO V CBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) fT C ob Conditions V CB = 20V , IE = 0 IC = 10mA, IE = 0 IC = 2mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 150mA*2 V CE = 10V , IC = 500mA*2 IC = 300mA, IB = 30mA*2 V CB = 10V , IE = –50mA*2, f = 200MHz V CB = 10V , IE = 0, f = 1MHz min typ 160 0.35 200 max 0.1 340 0.6 Unit mA V V V V MHz pF *2 Pulse measurement 2SD1820 2SD1820A 2SD1820 2SD1820A *1hFE1 Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 2SD1820 WQ WR WS 2SD1820A XQ XR XS Marking symbol :W (2SD1820) X(2SD1820A) Marking Symbol
Transistor 2SD1820, 2SD1820A PC — Ta I C — V CE IC — IB V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB V CER — R BE 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 02 0 1641 2 8 800 600 200 500 700 400 100 300 Ta=25˚C IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 01 0 826 4 800 600 200 500 700 400 100 300 VCE =10V Ta=25˚C Base current IB (mA ) Collector current IC (mA ) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3
100 IC /IB=10
25˚C –25˚C Ta=75˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 Ta=–25˚C 25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 300 250 200 150 100 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 240 200 160 120 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 1 10 100 10003 30 300 120 100 IC =2mA Ta=25˚C 2SD1820A 2SD1820 Base to emitter resistance RBE (kW ) Collector to emitter voltage VCER (V)