2SD1819A_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SD1819A ■ Features

  • Low Collector-to-Emitter Saturation Voltage
  • High foward current transfer ratio hFE.
  • Complementary to 2SB1218A

1 Base

2 Emitter

3 Collector

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 Emitter - Base Voltage VEBO 7 Collector Current - Continuous IC 100 Collector Current - Pulse ICP 200 Collector Power Dissipation PC 150 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V mA ■ Electrical Characteristics Ta = 25℃ ■ Classification of hfe(1) Type 2SD1819A-Q 2SD1819A-R 2SD1819A-S Range 160-260 210-340 290-460 Marking ZQ ZR ZS Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 2 mA， IB= 0 50 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 7 Collector-base cut-off current ICBO VCB= 50 V , IE= 0 0.1 Collector-emitter cut-off current ICEO VCE= 40 V , IB= 0 10 Emitter cut-off current IEBO VEB= 6V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.1 0.3 Base - emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1.2 hFE(1) VCE= 10V, IC= 2mA 160 460 hFE(2) VCE= 2V, IC= 100 mA 90 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 3.5 pF Transition frequency fT VCE= 10V, IE= -2 mA,f=1MHz 150 MHz DC current gain V V uA

www.kexin.com.cn2 Transistors NPN Transistors 2SD1819A ■ Typical Characterisitics PC IaT — C — VCE IB — VBE IC — VBE IC — I B VCE(sat) — I C hFE — I C fT — I E 0610 40 12080 14020 10060 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW) 010 82 64 Ta=25˚C IB=160µA 40µA 20µA 60µA 80µA 140µA 120µA 100µA Collector to emitter voltage VCE (V) Collector current IC (mA) 1200 1000 800 600 400 200 VCE=10V Ta=25˚C Base to emitter voltage VBE (V) Base current IB (µA) 200 160 120 VCE=10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA) 00010 800200 600400 240 200 160 120 VCE=10V Ta=25˚C Base current IB (µA) Collector current IC (mA) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC/IB=10

25˚C –25˚C Ta=75˚C Collector current IC (mA) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 600 500 400 300 200 100 VCE=10V Ta=75˚C 25˚C –25˚C Collector current IC (mA) Forward current transfer ratio hFE 300 240 120 180 VCB=10V Ta=25˚C Emitter current IE (mA) Transition frequency fT (MHz)