2SD1816T-TL-E SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 9

Technical content

Features

  • Low collector-to-emitter saturation voltage • Good linearity of hFE
  • Small and slim package facilitating compactness of sets
  • High f T • Fast switching time Specifi cations ( ): 2SB1216 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (- -)120 V Collector-to-Emitter Voltage VCEO (- -)100 V Emitter-to-Base Voltage VEBO (- -)6 V Collector Current IC (- -)4 A Collector Current (Pulse) ICP (- -)8 A Continued on next page. Package Dimensions unit : mm (typ.) Package Dimensions unit : mm (typ.) 7518-003 7003-003

50212 TKIM/N2503TN (KT)/92098HA (KT)/8229MO/4087TA, TS

PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching

Applications

http://semicon.sanyo.com/en/network Product & Package Information

  • Package : TP • Package : TP-FA
  • JEITA, JEDEC : SC-64, TO-251, SOT-553, DPAK • JEITA, JEDEC : SC-63, TO-252, SOT-428, DPAK
  • Minimum Packing Quantity : 500 pcs./bag • Minimum Packing Quantity : 700 pcs./reel Marking Packing Type (TP-FA) : TL Electrical Connection (TP , TP-FA) TL 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-F A 2SB1216S-E 2SB1216S-H 2SB1216T-E 2SB1216T-H 2SD1816S-E 2SD1816S-H 2SD1816T-E 2SD1816T-H 2SB1216S-TL-E 2SB1216S-TL-H 2SB1216T-TL-E 2SB1216T-TL-H 2SD1816S-TL-E 2SD1816S-TL-H 2SD1816T-TL-E 2SD1816T-TL-H B1216 D1816 LOT No.RANKLOT No.RANK

No. 2540-2/9 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Dissipation P C Tc=25°C2 0 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min. typ. max. Collector Cutoff Current I CBO VCB=(- -)100V, IE=0A (- -)1 μA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)1 μA DC Current Gain hFE1V CE=(- -)5V, IC=(- -)0.5A 70* 400* hFE2V CE=(- -)5V, IC=(- -)3A 40 Gain-Bandwidth Product f T VCE=(- -)10V, IC=(- -)0.5A (130)180 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (65)40 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=(- -)2A, IB=(- -)0.2A (- -200)150 (- -500)400 mV Base-to-Emitter Saturation Voltage V BE(sat) V CE=(- -)2A, IC=(- -)0.2A (- -)0.9 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -)120 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)100 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)6 V Turn-On Time t on See specifi ed Test Circuit. 100 ns Storage Time t stg (800)900 ns Fall Time t f 50 ns * : The 2SB1216/2SD1816 are classifi ed by 0.5A hFE as follows : Rank Q R S T hFE 70 to 140 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit

Ordering Information

Device Package Shipping memo 2SB1216S-E TP 500pcs./bag Pb Free 2SB1216S-H TP 500pcs./bag Pb Free and Halogen Free 2SB1216T-E TP 500pcs./bag Pb Free 2SB1216T-H TP 500pcs./bag Pb Free and Halogen Free 2SD1816S-E TP 500pcs./bag Pb Free 2SD1816S-H TP 500pcs./bag Pb Free and Halogen Free 2SD1816T-E TP 500pcs./bag Pb Free 2SD1816T-H TP 500pcs./bag Pb Free and Halogen Free 2SB1216S-TL-E TP-FA 700pcs./reel Pb Free 2SB1216S-TL-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SB1216T-TL-E TP-FA 700pcs./reel Pb Free 2SB1216T-TL-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SD1816S-TL-E TP-FA 700pcs./reel Pb Free 2SD1816S-TL-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SD1816T-TL-E TP-FA 700pcs./reel Pb Free 2SD1816T-TL-H TP-FA 700pcs./reel Pb Free and Halogen Free IC=10IB1= --10IB2=2A For PNP, the polarity is reversed. VR RB VCC=50VVBE= --5V + + 507 INPUT OUTPUT 100MF 470 MF PW=20Ms IB1 D.C.b1% IB2

No. 2540-3/9 IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VCE Collector-to-Emitter V oltage, VCE -- V IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector Current, IC -- A IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A hFE -- IC Collector Current, IC -- A DC Current Gain, hFE hFE -- IC Collector Current, IC -- A DC Current Gain, hFE 12 4 35 ITR09251 2SD1816 90mA 80mA70mA 60mA 50mA 40mA --5 --4 --3 --2 --1 ITR09250 2SB1216 IB=0 --2mA --10mA --40mA --30mA --20mA --5mA IB=0 2mA 5mA 10mA 20mA 30mA 100mAFrom top --100mA --90mA --80mA --70mA --60mA --50mA 2SD1816 VCE=5V 100 --0.01 1000 5 --0.123 5 23 5 --1.0 23 5 --10 2SB1216 VCE= --5V ITR09256 Ta=75°C 25°C --25°C 100 0.01 1000 5 0.1 1023 5 23 5 23 5 1.0 ITR09257 Ta=75°C 25°C --25°C 2.0 1.6 1.2 0.8 0.4 10 20 40 30 50 ITR09253 2SD1816 --2.0 --1.6 --1.2 --0.8 --0.4 ITR09252 2SB1216 IB=0 --1mA --3mA --8mA --9mA --10mA --7mA --6mA --5mA --4mA --2mA IB=0 1mA 2mA 3mA 4mA 5mA 6mA 7mA 8mA --5 --4 --3 --2 --1 ITR09254 2SB1216 VCE= --5V --25 Ta=75 ITR09255 2SD1816 VCE=5V --25 Ta=75

No. 2540-4/9 2SB1216 / 2SD1816 f=1MHz 0.1 100 2 1.0 25 335 7 2 35 7 2SB1216 / 2SD1816 VCE=10V ITR09258 2SB1216 2SD1816 Cob -- VCB 1.0 100 57 10 22 35 723 5 7 100 ITR09259 2SB1216 2SD1816 ITR09265 100 140 150120 1602006 0 40 80 2SD1816 IC / IB=10 --10 --1.0 ITR09262 2SB1216 IC / IB=10 2SD1816 IC / IB=10 ITR09260 2SB1216 IC / IB=10 Ta= --25°C 25°C 75°C Ta=75°C 25°C --25°C 0.1 1.00.0152 3 52 1035 235 1000 100 ITR09261 Ta=75°C 25°C --25°C 52 3 52 3 50.01 0.1 1.0 23 5 10 1.0 ITR09263 Ta= --25°C 25°C 75°C ITR09264 ICICP 1ms10ms 100ms DC operation (Tc=25 °C) DC operation (Ta=25 °C) 1.0 0.1 0.01 25 3 1.0 25 3 10 25 3 100 2 --1000 --100 --10 Tc=25°C Single pulse For PNP, the minus sign is omitted. 2SB1216 / 2SD1816 VCE(sat) -- IC Collector Current, IC -- A VCE(sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV fT -- IC Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V VBE(sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V VBE(sat) -- IC Base-to-Emitter Saturation V oltage, VBE(sat) -- V Collector Current, IC -- A A S O Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C PC -- Ta For PNP, the minus sign is omitted. For PNP, the minus sign is omitted. No heat sink Ideal heat dissipation

No. 2540-5/9 Taping Specifi cation 2SB1216S-TL-E, 2SB1216S-TL-H, 2SB1216T-TL-E2SB1216T-TL-H, 2SD1816S-TL-E, 2SD1816S-TL-H, 2SD1816T-TL-E, 2SD1816T-TL-H

No. 2540-6/9 Outline Drawing Land Pattern Example 2SB1216S-TL-E, 2SB1216S-TL-H, 2SB1216T-TL-E2SB1216T-TL-H, 2SD1816S-TL-E, 2SD1816S-TL-H, 2SD1816T-TL-E, 2SD1816T-TL-H Mass (g) Unit 0.282 * For reference mm Unit: mm 7.0 1.5 2.3 2.02.5 2.3 7.0

No. 2540-7/9 Bag Packing Specifi cation 2SB1216S-E, 2SB1216S-H, 2SB1216T-E, 2SB1216T-H, 2SD1816S-E, 2SD1816S-H, 2SD1816T-E, 2SD1816T-H

No. 2540-8/9 Outline Drawing 2SB1216S-E, 2SB1216S-H, 2SB1216T-E, 2SB1216T-H, 2SD1816S-E, 2SD1816S-H, 2SD1816T-E, 2SD1816T-H Mass (g) Unit 0.315 * For reference mm

No. 2540-9/9PS This catalog provides information as of May, 2012. Specifi cations and information herein are subject to change without notice. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.