2SD1805_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors NPN Transistors 2SD1805 ■ Features
- Low Collector-to-Emitter Saturation Voltage
- Fast Switching Speed
- Large current capacity 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm
1 Base
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 5 Collector Current - Pulse ICP 8 Collector Power Dissipation Tc = 25℃ 15 Ta = 25℃ 1 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V PC W A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA， RBE= ∞ 20 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 6 Collector-base cut-off current ICBO VCB= 50 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=3 A, IB=60mA 0.22 0.5 Base - emitter saturation voltage VBE(sat) IC=3 A, IB=60mA 1.5 hFE(1) VCE= 2V, IC= 500mA 120 560 hFE(2) VCE= 2V, IC= 3 A 95 Turn-on Time ton 30 Storage Time tstg 300 Fall Time tf 40 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 45 pF Transition frequency fT VCE= 10V, IC= 50 mA 120 MHz DC current gain V See Test Circuit ns V uA ■ Classification of hfe(1) Type 2SD1805-E 2SD1805-F 2SD1805-G Range 120-200 160-320 280-560
www.kexin.com.cn2 Transistors NPN Transistors 2SD1805 ■ Typical Characterisitics
www.kexin.com.cn 3 Tran sistors NPN Transistors 2SD1805 ■ Typical Characterisitics