2SD1804_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Tran sistors NPN Transistors 2SD1804 ■ Features

  • Low Collector-to-Emitter Saturation Voltage
  • Fast Switching Speed
  • High Current And High fT.
  • Complementary to 2SB1204 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 8 Collector Current - Pulse ICP 12 Collector Power Dissipation Tc = 25℃ 20 Ta = 25℃ 1 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V PC W A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA， RBE= ∞ 50 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 6 Collector-base cut-off current ICBO VCB= 50 V , IE= 0 1 Emitter cut-off current IEBO VEB= 5V , IC=0 1 Collector-emitter saturation voltage VCE(sat) IC=4 A, IB=200mA 0.2 0.4 Base - emitter saturation voltage VBE(sat) IC=4 A, IB=200mA 0.95 1.3 hFE(1) VCE= 2V, IC= 500mA 70 400 hFE(2) VCE= 2V, IC= 6 A 35 Storage Time tstg 500 Fall Time tf 20 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 65 pF Transition frequency fT VCE= 5V, IC= 1 A 180 MHz V uA See Test Circuit ns DC current gain V ■ Classification of hfe(1) Type 2SD1804-Q 2SD1804-R 2SD1804-S 2SD1804-T Range 70-140 100-200 140-280 200-400

www.kexin.com.cn2 Transistors NPN Transistors 2SD1804 TEST CIRCUIT ■ Typical Characterisitics Colletcor Current, IC -A Colletcor Current, IC -A Colletcor Current, IC - A DC Current Gain, hFE

www.kexin.com.cn 3 Tran sistors NPN Transistors 2SD1804 ■ Typical Characterisitics 7532 100 0.1 7532 1.0 Gain-Bandwidth Product, fT -MHz 10 7532 100 101.0 7532 100 f=1MHz Output Capacitance, COB-pF 7532 10 VCE=5V fT - IC Colletcor Current, IC (A) COB - VCB Colletcor to Base Voltage, VCB (V) 5 7 7532 100 Collector to Emitter Saturation Voltage, VCE(SAT) - mV 0.10.01 7532 1.0 3210 1000 TA=-25℃ TA=75℃ 5 7 7532 1.0 0.10.01 7532 1.0 532 TA=75℃ TA=25℃ TA=-25℃ Base to Emitter Saturation Voltage, VBE(SAT) -V 710 IC/IB=20 7 10 Ic/IB=20 TA=25℃ Collector Current, IC (A) VCE(SAT) - IC Collector Current, IC (A) VBE(SAT) - IC 6040200 80 140120100 160 No heat sink PD -Ta Collector Dissipation, PC - W 7532 101.0 7532 100 0.1 0.01 Collector Current, IC - A 753 1.0 100ms DC Ope ration T C=25℃ DC Operation Icp IC 20.1 TC=25℃, One Pulse For PNP,minus sign is omitted. 10ms 1ms Colletcor to Emitter Voltage, VCE (V) A S O Ambient Temperature, Ta (℃) Ta=25℃