2SD1803_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Tran sistors NPN Transistors 2SD1803 ■ Features

  • Low Collector-to-Emitter Saturation Voltage
  • Fast Switching Speed
  • High Current And High fT.
  • Complementary to 2SB1203 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 5 Collector Current - Pulse ICP 8 Collector Power Dissipation Tc = 25℃ 20 Ta = 25℃ 1 Junction Temperature TJ 150 Storage Temperature Range Tstg -40 to 150 V PC W A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA， RBE= ∞ 50 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 6 Collector-base cut-off current ICBO VCB= 50 V , IE= 0 1 Emitter cut-off current IEBO VEB= 5V , IC=0 1 Collector-emitter saturation voltage VCE(sat) IC=3 A, IB=150mA 0.22 0.4 Base - emitter saturation voltage VBE(sat) IC=3 A, IB=150mA 0.95 1.3 hFE(1) VCE= 2V, IC= 500mA 70 400 hFE(2) VCE= 2V, IC= 4 A 35 Turn-on Time ton 50 Storage Time tstg 500 Fall Time tf 20 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 40 pF Transition frequency fT VCE= 5V, IC= 1 A 180 MHz See Test Circuit ns DC current gain V V uA ■ Classification of hfe(1) Type 2SD1803-Q 2SD1803-R 2SD1803-S 2SD1803-T Range 70-140 100-200 140-280 200-400

www.kexin.com.cn2 Transistors NPN Transistors 2SD1803 TEST CIRCUIT INPUT OUTPUT PW=20μS Duty Cycle≦1% IB1 IB2 25V -5V 100μ 470μ VR RB RL Ic=10IB1=-10IB2=2A (Unit : (resistance : Ω, capacitance : F)) ■ Typical Characterisitics 0120 864 Collector to Emitter Voltage, VCE (V) Ic -VCE IB=0 10mA 20mA 30mA 40mA 50mA 5mA 45mA Ic -VCE Collector to Emitter Voltage, VCE (V) 30mA 25mA 20mA 15mA 10mA 5mA IB=0 0 0.2 0.80.60.4 Base to Emitter Voltage, VBE (V) Ic -VBE 1.0 1.2 7532 100 hFE -I c Collector Current, IC (A) 0.10.01 7532 1.0 1000 VCE=2V 35mA 25mA 15mA Ta=75 Ta=25 VCE=2V Ta=75 753 102 Ta=-25Ta=25 Ta=-25 C C C C C CC

www.kexin.com.cn 3 Tran sistors NPN Transistors 2SD1803 ■ Typical Characterisitics 7532 100 0.1 7532 1.0 fT -I c Colletcor Current, Ic (A) 7532 100 101.0 7532 100 f=1MHz Cob -VcB Colletcor to Base Voltage, VCB (V) 7532 10 VCE=5V 1000 Power Dissipation, PD (W) Collector to Emitter Saturation Voltage, VCE(sat) (mV) Base to Emitter Saturation Voltage, VBE(sat) (V) Collector Current, IC (A) DC Oper ation Tc=25 DC Oper ation C Ta= 25C