2SD1801_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors NPN Transistors 2SD1801 ■ Features
- Low collector-to-emitter saturation voltage.
- Fast switching speed.
- Complementary to 2SB1201 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm
1 Base
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 2 Collector Current - Pulse ICP 4 Collector Power Dissipation Tc=25°C 15 0.8 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA，RBE= ∞ 50 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 6 Collector-base cut-off current ICBO VCB= 50 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=1 A, IB=50 mA 0.15 0.4 Base - emitter saturation voltage VBE(sat) IC=1 A, IB=50 mA 0.9 1.2 VCE= 2V, IC= 100 mA 100 560 VCE= 2V, IC= 1.5 A 40 Turn-ON Time ton 60 Storage Time tstg 550 Fall Time tf 30 Collector Output capacitance Cob VCB= 10V, IE= 0,f=1MHz 12 pF Transition frequency fT VCE= 10V, IC= 50mA 150 MHz See specified Test Circuit ns V V uA DC current gain hFE ■ Classification of hfe(1) Type 2SD1801-R 2SD1801-S 2SD1801-T 2SD1801-U Range 100-200 140-280 200-400 280-560
www.kexin.com.cn2 Transistors NPN Transistors 2SD1801 ■ Typical Characterisitics Switching Time Test Circuit
www.kexin.com.cn 3 Tran sistors NPN Transistors 2SD1801 ■ Typical Characterisitics