2SD1775 PANASONIC

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2SD1775, 2SD1775A Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio n Features l High foward current transfer ratio hFE l Satisfactory linearity of foward current transfer ratio hFE l N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC IB PC Tj Tstg Ratings 100 0.5 1.3 150 –55 to +150 Unit V V V A A A W 2SD1775 2SD1775A 2SD1775 2SD1775A TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol I CBO ICEO IEBO V CEO hFE * V CE(sat) V BE(sat) fT C ob ton tstg tf Conditions V CB = 80V , IE = 0 V CB = 100V, IE = 0 V CE = 40V , IB = 0 V EB = 6V , IC = 0 IC = 25mA, IB = 0 V CE = 4V , IC = 300mA IC = 1A, IB = 25mA IC = 1A, IB = 25mA V CE = 12V , IC = 200mA, f = 10MHz V CB = 10V , IE = 0, f = 1MHz IC = 1A, IB1 = 25mA, IB2 = –25mA, V CC = 50V min 500 typ 0.6 2.5 1.0 max 100 100 100 100 1500 1.0 1.2 Unit mA mA mA V V V MHz pF ms ms ms 2SD1775 2SD1775A 2SD1775 2SD1775A *hFE Rank classification Rank Q P hFE 500 to 1000 800 to 1500 Unit: mm 1:Base 2:Collector 3:Emitter N Type Package 8.5–0.2 6.0–0.5 10.0–0.310.5min. 2.0 1.5–0.1 1.5max. 0.8–0.1 5.08–0.5 2.54–0.3 1.1max. 0.5max. 1.0–0.1 3.4–0.3 213 Unit: mm 8.5–0.2 4.4–0.5 2.0 10.0–0.3 14.7–0.5 4.4–0.5 6.0–0.3 3.4–0.3 2.54–0.3 5.08–0.5 1.0–0.1 0.8–0.1 1.5 –0.4 3.0 +0.4 –0.2 0 to 0.4 1.1 max. R0.5 R0.5 123 1:Base 2:Collector 3:Emitter N Type Package (DS)

Power Transistors 2SD1775, 2SD1775A PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C ton, tstg, tf — IC Area of safe operation (ASO) 0 150 12510025 75 50 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) With a 50 · 50 · 2mm Al heat sink (4) Without heat sink (PC =1.3W)(1) (2) (3) (4) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 IB=3mA TC =25˚C 2mA 1mA 0.8mA 0.6mA 0.4mA 0.2mA 0.1mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 3 10.10.03 0.3 0.01 0.03 0.1 0.3 IC /IB=40 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 3 10.10.03 0.3 0.01 0.03 0.1 0.3 IC /IB=40 25˚C 100˚C TC =–25˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 100 300 1000 3000 10000 30000 100000 TC =100˚C 25˚C –25˚C VCE =4V Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 0.1 0.3 100 300 1000 VCE =12V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 0.01 0.03 0.1 0.3 100 Pulsed tw =1ms Duty cycle=1% I C /IB=40 (IB1=–IB2) VCC =50V TC =25˚C tstg tf ton Collector current IC (A) Switching time ton,tstg,tf (ms) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C ICP IC t=10ms 1ms 300ms 2SD1775 2SD1775A Collector to emitter voltage VCE (V) Collector current IC (A)

Power Transistors 2SD1775, 2SD1775A R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 10–2 10–1 102 (1) Without heat sink (2) With a 50 · 50 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)