2SD1771 PANASONIC

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2SD1771, 2SD1771A Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Complementary to 2SB1191 and 2SB1191A n Features l High collector to emitter VCEO l Large collector power dissipation PC l N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 200 200 150 180 1.3 150 –55 to +150 Unit V V V A A W 2SD1771 2SD1771A 2SD1771 2SD1771A TC =25°C Ta=25°C *hFE1 Rank classification Rank Q P hFE1 60 to 140 100 to 240 n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V CEO V EBO hFE1 * hFE2 V BE V CE(sat) fT C ob Conditions V CB = 200V, IE = 0 V EB = 4V , IC = 0 IC = 5mA, IB = 0 IE = 0.5mA, IC = 0 V CE = 10V , IC = 100mA V CE = 10V , IC = 300mA V CE = 10V , IC = 300mA IC = 500mA, IB = 50mA V CE = 10V , IC = 100mA, f = 1MHz V CB = 10V , IE = 0, f = 1MHz min 150 180 typ max 240 Unit mA mA V V V V MHz pF 2SD1771 2SD1771A Unit: mm 1:Base 2:Collector 3:Emitter N Type Package 8.5–0.2 6.0–0.5 10.0–0.310.5min. 2.0 1.5–0.1 1.5max. 0.8–0.1 5.08–0.5 2.54–0.3 1.1max. 0.5max. 1.0–0.1 3.4–0.3 213 Unit: mm 8.5–0.2 4.4–0.5 2.0 10.0–0.3 14.7–0.5 4.4–0.5 6.0–0.3 3.4–0.3 2.54–0.3 5.08–0.5 1.0–0.1 0.8–0.1 1.5 –0.4 3.0 +0.4 –0.2 0 to 0.4 1.1 max. R0.5 R0.5 123 1:Base 2:Collector 3:Emitter N Type Package (DS)

Power Transistors 2SD1771, 2SD1771A PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C fT —I C Area of safe operation (ASO) R th(t)—t 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 50 · 50 · 2mm Al heat sink (3) Without heat sink (PC =1.3W) (1) (3) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 02 4 201641 2 8 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 IB=20mA TC =25˚C 10mA 8mA 6mA 4mA 2mA 1mA Collector to emitter voltage VCE (V) Collector current IC (A) 01 . 6 0.4 1.2 0.8 TC =100˚C 25˚C –25˚C VCE =10V Base to emitter voltage VBE (V) Collector current IC (A) 0.01 3 10.10.03 0.3 0.01 0.03 0.1 0.3 IC /IB=10 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 3 10.10.03 0.3 100 300 1000 VCE =10V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 0.1 0.3 100 300 1000 VCE =10V f=1MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C ICP IC t=0.5ms 10ms 1ms 300ms 2SD1771 2SD1771A Collector to emitter voltage VCE (V) Collector current IC (A) 10–4 1010–3 10–110–2 11 0 3102 104 10–2 10–1 102 (1) Without heat sink (2) With a 50 · 50 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)