2SD1760_15 KEXIN

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  • Manufacturer or author: Provided By digicamel.com
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Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SD1760 ■ Features

  • Low VCE (sat)
  • Complementary to 2SB1184 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 3 Collector Current - Pulse ICP 4.5 Collector Power Dissipation Tc=25°C PC 15 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA，IB= 0 50 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 5 Collector-base cut-off current ICBO VCB= 50 V , IE= 0 1 Emitter cut-off current IEBO VEB= 4V , IC=0 1 Collector-emitter saturation voltage VCE(sat) IC=2 A, IB=200 mA 0.5 1 Base - emitter saturation voltage VBE(sat) IC=2 A, IB=200 mA 1.2 DC current gain hFE VCE= 3V, IC= 500 mA 120 390 Collector Output capacitance Cob VCB= 10V, IE= 0,f=1MHz 40 pF Transition frequency fT VCE= 5V, IE= -500mA,f=30MHz 90 MHz V V uA ■ Classification of hfe Type 2SD1760-Q 2SD1760-R Range 120-270 180-390

www.kexin.com.cn2 Transistors NPN Transistors 2SD1760 ■ Typical Characterisitics COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics 0.01 0.2 0.5 0.1 0.02 0.05 VCE = 3V 25°C −25°C Ta = 100°C COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics ( 1) 0 1 2 3 4 5 0.5 1.0 1.5 2.0 2.5 3.0 15mA 20mA 25mA 30mA 35mA 40mA 50mA 10mA 5mA IB = 0mA 45mA Ta = 25°C COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded-emitter output characteristics( 2) 0 10 20 30 40 50 0.5 1.0 1.5 2.0 2.5 3.0 Ta = 25°C50mA 45mA 40mA 35mA 30mA 25mA 15mA 10mA PC = 15W IB = 5mA 20mA DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current(1 ) 1000 500 200 100 Ta = 25°C VCE = 5V DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) Fig.5 DC current gain vs. collector curren(2 ) 1000 500 200 100 VCE = 3V Ta = 100°C −25°C 25°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage vs. collector current 0.01 0.02 0.05 0.1 0.2 0.5 Ta = 25°C IC/IB = 50 COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) BASE SATURATION VOLTAGE : VBE (sat) (V) Fig.7 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current 0.5 0.2 0.1 0.05 0.02 0.01 lC/lB = 10 VBE (sat) VCE (sat) Ta = −25°C 100°C 25°C 25°C Ta = 100°C −25°C EMITTER CURRENT : −IE (mA) TRANSITION FREQUENCY : fT (MHz) Fig.8 Gain bandwidth product vs. emitter current 1 2 5 10 20 50 100 200 5001000 1000 500 200 100 Ta = 25°C VCE = 5V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.9 Collector output capacitance vs. collector-base voltage 0.1 0.2 0.5 1 2 5 10 20 50 100 100 200 500 1000 Ta = 25°C f = 1MHz IE = 0A

www.kexin.com.cn 3 Transistors ■ Typical Characterisitics NPN Transistors 2SD1760 COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area 0.1 0.01 0.02 0.05 0.1 0.2 0.5 0.2 0.5 1 2 5 10 20 50 100 Ta = 25°C Single pulse P W 10msP W 100ms DC VCE=5v IC=0.2A 1 10 1sec 10sec 100sec100 0.1 100 TIME : T (ms) TRANSIENT THERMAL RESISTANCE : Rth (°C/W) Fig.11 Transient thermal resistance