2SD1758TLR LITTELFUSE
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1/2 www.rohm.com ○c 2010 ROHM Co., Ltd. All rights reserved. 2010.04 - Rev.C Medium power transistor (32V, 2A) 2SD1758 / 2SD1862 Features Dimensions (Units : mm) 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1182 / 2SB1240 Structure Epitaxial planar type NPN silicon transistor Absolute maximum ratings (Ta=25C) 2SD1758 2SD1862 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Collector power dissipation ∗1 Single pulse, PW=20ms ∗2 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm2 or lager. Parameter Symbol Limits Unit VCBO 40 V VCEO 32 V VEBO 5V IC
2 A (DC)
2.5 A (Pulse) ∗1
Tj 150 °C Tstg −55 to +150 °C PC 1W ∗2
10 W (TC=25°C)
Electrical characteristics (Ta=25C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 0.5 100 0.8 390 VI C=50μA IC=1mA IE=50μA VCB=20V VEB=4V IC/IB=2A/0.2A ∗ VCE=5V, IE=−50mA, f=100MHz ∗ VCE=3V, IC=0.5A ∗ VCB=10V, IE=0A, f=1MHz V V μA μA V MHz pF Typ. Max. Unit Conditions 120 Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ Measured using pulse current. −0.1 +0.2 −0.1 +0.2 +0.3 −0.1 2.3±0.22.3±0.2 0.65±0.1 0.9 0.75 1.0±0.2 0.55±0.1 9.5±0.5 5.5 1.5±0.3 2.5 1.5 2.3 0.5±0.1 6.5±0.2 5.1 C0.5 (3)(2)(1) 0.9 1.0 6.8±0.2 2.5±0.2 1.05 0.45±0.1 2.54 2.54 0.5±0.1 0.9 4.4±0.214.5±0.5 (1) (2) (3) 0.65Max. (1) Emitter (2) Collector (3) Base ROHM : ATV(1) Base (2) Collector (3) Emitter ROHM : CPT3 EIAJ : SC-63 2SD1758 2SD1862
2/2 www.rohm.com ○c 2010 ROHM Co., Ltd. All rights reserved. 2010.04 - Rev.C Data Sheet 2SD1758 / 2SD1862 Packaging specifications and hFE Type hFE TL 2500 TV2 2500 2SD1758 − 2SD1862 − QR QR Package Taping Code Basic ordering unit (pieces) hFE values are classified as follows : Item hFE R 180 to 390 Q 120 to 270 Electrical characteristic curves COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics 02 .0 1000 2000 200 500 100 Ta=25°C VCE=3V COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics 0.1 0.2 0.3 0.4 0.5 Ta=25°C IB=0A 3.0mA 2.7mA 2.4mA 2.1mA 1.8mA 1.5mA 1.2mA 0.9mA 0.6mA 0.3mA DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current 500 10 20 50 100 200 500 1A 2A 200 100 Ta=25°C VCE=3V COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current 500 200 100 5 10 20 50 100 200 500 1A 2A Ta=25°C IC/IB=50 BASE SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR CURRENT : IC (mA) Fig.5 Collector-emitter saturation voltage vs. collector current 0.2 0.5 0.1 10 20 50 100 200 500 1A 2A Ta=25°C IC/IB=10 EMITTER CURRENT : IE (mA) TRANSITION FREQUENCY : fT (MHz) Fig.6 Transition frequency vs. emitter current -2−1 200 500 1000 100 Ta=25°C VCE=5V 0.5 200 500 1000 100 12 5 1 0 2 0 Ta=25°C f=1MHz IE=0A IC=0A COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Cib Cob COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Safe operating area 0.1 50 0.2 0.5 0.1 0.05 0.2 0.5 1 2 5 10 20 0.01 0.02 (2SD1758) PW=100ms∗ TC=25°C ∗Single nonrepetitive pulse Ic Max DC Ic Max Pulse Ta=25°C Single nonrepetitive pulse PW=10msPW=100ms 0.2 0.5 1 2 5 10 20 5 0 0.1 0.2 0.5 0.05 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) Fig.9 Safe operating area (2SD1862)
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