2SD1758_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SD1758 ■ Features

  • Low VCE (sat)
  • Complementary to 2SB1182 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 32 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 2 Collector Current - Pulse ICP 2.5 Collector Power Dissipation Tc=25°C PC 10 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 40 Collector- emitter breakdown voltage VCEO Ic= 1 mA，IB= 0 32 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 5 Collector-base cut-off current ICBO VCB= 30 V , IE= 0 1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.5 Collector-emitter saturation voltage VCE(sat) IC=2 A, IB=200 mA 0.5 0.8 Base - emitter saturation voltage VBE(sat) IC=2 A, IB=200 mA 1.2 DC current gain hFE VCE= 3V, IC= 500 mA 120 390 Collector Output capacitance Cob VCB= 10V, IE= 0,f=1MHz 30 pF Transition frequency fT VCE= 5 V, IE= -50mA,f=100MHz 100 MHz V V uA ■ Classification of hfe Type 2SD1758-Q 2SD1758-R Range 120-270 180-390

www.kexin.com.cn2 Transistors NPN Transistors 2SD1758 ■ Typical Characterisitics COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics 20 .0 1000 2000 200 500 100 Ta=25°C VCE=3V COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics 0.1 0.2 0.3 0.4 0.5 Ta=25°C IB=0A 3.0mA 2.7mA 2.4mA 2.1mA 1.8mA 1.5mA 1.2mA 0.9mA 0.6mA 0.3mA DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current 500 10 20 50 100 200 500 1A 2A 200 100 Ta=25°C VCE=3V COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current 500 200 100 5 10 20 50 100 200 500 1A 2A Ta=25°C IC/IB=50 BASE SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR CURRENT : IC (mA) Fig.5 Collector-emitter saturation voltage vs. collector current 0.2 0.5 0.1 10 20 50 100 200 500 1A 2A Ta=25°C IC/IB=10 EMITTER CURRENT : IE (mA) TRANSITION FREQUENCY : fT (MHz) Fig.6 Transition frequency vs. emitter current -2−1 200 500 1000 100 Ta=25°C VCE=5V 0.5 200 500 1000 100 1 2 5 10 20 Ta=25°C f=1MHz IE=0A IC=0A COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Cib Cob COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Safe operating area 051.0 0.2 0.5 0.1 0.05 0.2 0.5 1 2 5 10 20 0.01 0.02 PW=100ms TC=25°C Single nonrepetitive pulse