2SD1755 PANASONIC

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Technical content

Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio n Features l High forward current transfer ratio hFE which has satisfactory linearity l High emitter to base voltage VEBO l I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC IB PC Tj Tstg Ratings 100 1.3 150 –55 to +150 Unit V V V A A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE * V CE(sat) fT ton tstg tf Conditions V CB = 100V, IE = 0 V EB = 15V , IC = 0 IC = 25mA, IB = 0 V CE = 4V , IC = 1A IC = 5A, IB = 0.1A V CE = 12V , IC = 0.5A, f = 10MHz IC = 5A, IB1 = 0.1A, IB2 = – 0.1A, V CC = 50V min 300 0.3 typ 1.5 0.6 max 100 100 2000 0.5 Unit mA mA V V MHz ms ms ms *hFE Rank classification Rank Q P hFE 300 to 1200 800 to 2000 TC =25°C Ta=25°C Unit: mm 1:Base 2:Collector 3:Emitter I Type Package Unit: mm 1:Base 2:Collector 3:Emitter I Type Package (Y) 7.2–0.3 7.0–0.3 3.0–0.2 3.5–0.2 10.0 +0.3 –0. 0.8–0.21.0–0.2 4.6–0.4 213 1.1–0.1 0.75–0.1 2.3–0.2 0.85–0.1 0.4–0.1 7.0–0.3 0.75–0.1 2.3–0.2 4.6–0.4 1.1–0.1 10.2–0.3 7.2–0.3 2.0–0.2 0.9–0.1 3.5–0.2 2.5–0.2 1.01.0 2.5–0.2 3.0–0.2 1.0 max. 123 0 to 0.15 0 to 0.15 2.5 0.5 max.

PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C C ob —V CB ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) Without heat sink (PC =1.3W) (1) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA TC =25˚C Collector to emitter voltage VCE (V) Collector current IC (A) 0.1 1 100.3 3 0.01 0.1 0.03 0.3 IC /IB=50 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 100.3 3 0.01 0.1 0.03 0.3 IC /IB=50 TC =–25˚C 25˚C100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 100 300 1000 3000 10000 30000 100000 VCE =4V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 0.1 0.3 100 300 1000 VCE =12V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 0.1 1 10 1000.3 3 30 100 300 1000 3000 10000 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 08 26 4715 3 0.01 0.03 0.1 0.3 100 Pulsed tw =1ms Duty cycle=1% I C /IB=50(IB1=–IB2) VCC =50V TC =25˚C tstg tf ton Collector current IC (A) Switching time ton,tstg,tf (ms) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C ICP IC 10ms t=1ms 300ms Collector to emitter voltage VCE (V) Collector current IC (A)

R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 10–1 102 103 (1) Without heat sink (2) With a 50 · 50 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)