2SD1750 PANASONIC

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2SD1750, 2SD1750A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB1180 and 2SB1180A n Features l High foward current transfer ratio hFE l High-speed switching l I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 1.3 150 –55 to +150 Unit V V V A A W 2SD1750 2SD1750A 2SD1750 2SD1750A TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 * hFE2 V CE(sat) V BE(sat) fT ton tstg tf Conditions V CB = 60V , IE = 0 V CB = 80V , IE = 0 V EB = 7V , IC = 0 IC = 30mA, IB = 0 V CE = 3V , IC = 4A V CE = 3V , IC = 8A IC = 4V , IB = 8mA IC = 4V , IB = 8mA V CE = 10V , IC = 0.5A, f = 1MHz IC = 4A, IB1 = 8mA, IB2 = –8mA min 2000 500 typ 0.5 max 100 100 10000 1.5 Unit mA mA V V V MHz ms ms ms 2SD1750 2SD1750A 2SD1750 2SD1750A *hFE1 Rank classification Rank Q P hFE1 2000 to 50004000 to 10000 Internal Connection B E C Unit: mm 1:Base 2:Collector 3:Emitter I Type Package Unit: mm 1:Base 2:Collector 3:Emitter I Type Package (Y) 7.2–0.3 7.0–0.3 3.0–0.2 3.5–0.2 10.0 +0.3 –0. 0.8–0.21.0–0.2 4.6–0.4 213 1.1–0.1 0.75–0.1 2.3–0.2 0.85–0.1 0.4–0.1 7.0–0.3 0.75–0.1 2.3–0.2 4.6–0.4 1.1–0.1 10.2–0.3 7.2–0.3 2.0–0.2 0.9–0.1 3.5–0.2 2.5–0.2 1.01.0 2.5–0.2 3.0–0.2 1.0 max. 123 0 to 0.15 0 to 0.15 2.5 0.5 max.

Power Transistors 2SD1750, 2SD1750A PC —T a I C —V CE V CE(sat)—I C V CE(sat)—I C V BE(sat)—I C hFE —I C Area of safe operation (ASO) R th(t)—t 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) Without heat sink (PC =1.3W) (1) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 05 413 2 IB=4.0mA TC =25˚C 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.1 30 1010.3 3 0.01 0.03 0.1 0.3 IC /IB=500 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.1 30 1010.3 3 0.01 0.03 0.1 0.3 (1) IC /IB=250 (2) IC /IB=500 (3) IC /IB=1000 TC =25˚C (3) (2) (1) Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.1 30 1010.3 3 0.01 0.03 0.1 0.3 IC /IB=500 25˚C 100˚C TC =–25˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.1 1 10 1000.3 3 30 100 300 1000 3000 10000 30000 100000 VCE =3V 25˚C –25˚C TC =100˚C Collector current IC (A) Forward current transfer ratio hFE 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C ICP IC t=10ms 1ms 300ms 2SD1750 2SD1750A Collector to emitter voltage VCE (V) Collector current IC (A) 10–4 1010–3 10–110–2 11 0 3102 104 10–1 102 103 (1) Without heat sink (2) With a 50 · 50 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)