2SD1742

2SD1742_15 KEXIN

Document overview

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Technical content

www.kexin.com.cn 1 Tran sistors NPN Transistors 2SD1742 ■ Features

• High forward current transfer ratio hFE which has satisfactory linearity
• Low collector to emitter saturation voltage VCE(sat)
• Complementary to 2SB1172 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 3 Collector Current - Pulse ICP 5 Collector Power Dissipation Tc=25°C 15 Ta=25°C 1.3 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 30 mA，IB= 0 60 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 6 Collector-base cut-off current ICBO VCB= 60 V , IE= 0 0.1 mA Collector-emitter cutoff current ICES VCE = 60V, VBE = 0 200 Collector-emitter cutoff current ICEO VCE = 30V, IB = 0 300 Emitter cut-off current IEBO VEB= 6V , IC=0 0.1 mA Collector-emitter saturation voltage VCE(sat) IC=3 A, IB=375 mA 1.2 Base - emitter saturation voltage VBE(sat) IC=3 A, IB=375 mA 1.2 Base - emitter voltage VBE VCE= 4V, IC= 3 A 1.8 VCE= 4V, IC= 1 A 70 250 VCE= 4V, IC= 3 A 10 Turn-ON Time ton 0.5 Storage Time tstg 2.5 Fall Time tf 0.4 Transition frequency fT VCE= 10V, IC= 500mA,f=10MHz 30 MHz IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V us V uA DC current gain hFE V 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Classification of hfe(1) Type 2SD1742-Q 2SD1742-P Range 70-150 120-250

www.kexin.com.cn2 Transistors NPN Transistors 2SD1742 ■ Typical Characterisitics PC IaT— C — VCE IC — VBE VCE(sat) — IC hFE — IC fT — IC R)OSA( noitarepo efas fo aerA th(t) — t 0610 40 12080 14020 10060 (1) TC=Ta (2) Without heat sink (PC=1.3W) (1) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W) 210 1082 64 TC=25˚C IB=100mA 90mA 80mA 70mA 60mA 40mA 30mA 20mA 10mA 50mA Collector to emitter voltage VCE (V) Collector current IC (A) TC=100˚C 25˚C –25˚C VCE=4V Base to emitter voltage VBE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC/IB=8 TC=100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 100 300 1000 3000 10000 VCE=4V TC=100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 100 300 1000 3000 10000 VCE=10V f=10MHz TC=25˚C Collector current IC (A) Transition frequency fT (MHz) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC=25˚C ICP IC t=10ms 300ms 1ms2SD1742 Collector to emitter voltage VCE (V) Collector current IC (A) 10–4 1010–3 10–110–2 011 3102 104 10–1 102 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink(1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)