2SD1741 PANASONIC

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2SD1741, 2SD1741A Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Complementary to 2SB1171 and 2SB1171A n Features l High forward current transfer ratio hFE which has satisfactory linearity l Low collector to emitter saturation voltage VCE(sat) l I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 200 200 150 180 1.3 150 –55 to +150 Unit V V V A A W 2SD1741 2SD1741A 2SD1741 2SD1741A TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Symbol ICBO IEBO V CBO V CEO V EBO hFE1 * hFE2 V BE V CE(sat) fT Conditions V CB = 200V, IE = 0 V EB = 4V , IC = 0 IC = 50mA, IE = 0 IC = 5mA, IB = 0 IE = 500mA, IC = 0 V CE = 10V , IC = 150mA V CE = 10V , IC = 400mA V CE = 10V , IC = 400mA IC = 500mA, IB = 50mA V CE = 10V , IC = 0.5A, f = 1MHz min 200 150 180 typ max 240 Unit mA mA V V V V V MHz 2SD1741 2SD1741A*hFE1 Rank classification Rank Q P hFE1 60 to 140 100 to 240 Unit: mm 1:Base 2:Collector 3:Emitter I Type Package Unit: mm 1:Base 2:Collector 3:Emitter I Type Package (Y) 7.2–0.3 7.0–0.3 3.0–0.2 3.5–0.2 10.0 +0.3 –0. 0.8–0.21.0–0.2 4.6–0.4 213 1.1–0.1 0.75–0.1 2.3–0.2 0.85–0.1 0.4–0.1 7.0–0.3 0.75–0.1 2.3–0.2 4.6–0.4 1.1–0.1 10.2–0.3 7.2–0.3 2.0–0.2 0.9–0.1 3.5–0.2 2.5–0.2 1.01.0 2.5–0.2 3.0–0.2 1.0 max. 123 0 to 0.15 0 to 0.15 2.5 0.5 max.

Power Transistors 2SD1741, 2SD1741A PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C fT —I C Area of safe operation (ASO) R th(t)—t 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) Without heat sink (PC =1.3W) (1) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 02 4 201641 2 8 1.2 1.0 0.8 0.6 0.4 0.2 IB=7mA 6mA 5mA 4mA 3mA 2mA 1mA TC =25˚C Collector to emitter voltage VCE (V) Collector current IC (A) 1.2 1.0 0.8 0.6 0.4 0.2 VCE =10V TC =100˚C 25˚C –25˚C Base to emitter voltage VBE (V) Collector current IC (A) 0.01 0.1 10.03 0.3 0.01 0.1 0.03 0.3 IC /IB=10 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 100 300 1000 3000 10000 VCE =10V 25˚C –25˚C TC =100˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 0.1 0.3 100 300 1000 VCE =10V f=1MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C ICP IC 5ms t=1ms 300ms 2SD1741 2SD1741A Collector to emitter voltage VCE (V) Collector current IC (A) 10–4 1010–3 10–110–2 11 0 3102 104 10–1 102 103 (1) Without heat sink (2) With a 50 · 50 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)