2SD1733TLQ LITTELFUSE
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1/3 www.rohm.com ○c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.E 2SD1733 (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 2SD1898 Abbreviated symbol : DF −0.1 +0.2 −0.05 +0.1 ±0.1 +0.2 −0.1 (3) (2) (1) 4.0±0.3 3.0±0.2 1.5±0.11.5±0.1 0.4 1.5 4.5 1.6±0.1 (1) Base (2) Collector (3) Emitter ROHM : CPT3 EIAJ : SC-63 −0.1 +0.2 +0.3 −0.1 2.3±0.22.3±0.2 0.65±0.1 0.9 0.755.5 1.5±0.3 6.5±0.2 5.1 C0.5 (3)(2)(1) 0.9 −0.1 +0.2 1.0±0.2 0.55±0.1 9.5±0.5 2.5 1.5 2.3 0.5±0.1 Power Transistor (80V, 1A) 2SD1898 / 2SD1733 Features Dimensions (Unit : mm) 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 Structure Epitaxial planer type NPN silicon transistor Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-emitter voltage V CEO 80 V Emitter-base voltage VEBO 5V Collector current IC
1 A (DC)
2 A (Pulse) ∗1
Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector power dissipation PC 0.5 W W W W (Tc=25°C) ∗1 Pw=20ms, duty=1 / 2 ∗2 When mounted on a 40×40×0.7mm ceramic board. 2SD1898 2SD1733
2/3 www.rohm.com ○c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.E Data Sheet 2SD1898 / 2SD1733 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-emitter voltage V CEO 80 V Emitter-base voltage VEBO 5V Collector current IC Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector power dissipation PC 0.5 W W W W (Tc=25°C) ∗1 Pw=20ms, duty=1 / 2 ∗2 When mounted on a 40×40×0.7mm ceramic board. 2SD1898 2SD1733 Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BV CBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 120 0.15 100 0.5 0.4 VI C=50μA IC=1mA IE=50μA VCB=100V VEB=4V IC/IB=500mA/50mA VCE=10V, IE=−50mA, f=100MHz VCE=3V, IC=0.5A∗ VCB=10V, IE=0A, f=1MHz V V μA μA V 120 − 390 − MHz pF Typ. Max. Unit Conditions ∗ Measured using pulse current Packaging specifications and hFE Package Taping Code 2SD1898 Type T100 1000hFE TL 2500 −2SD1733 QR QR Basic ordering unit (pieces) hFE values are classified as follows : Item hFE R 180 to 390 Q 120 to 270
3/3 www.rohm.com ○c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.E Data Sheet 2SD1898 / 2SD1733 Electrical characteristic curves 0.1 COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics 1000 100 Ta=25°C VCE=5V 2408 1 0 6 COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics 1.0 0.8 0.6 0.4 0.2 6mA 5mA 4mA 3mA 2mA 1mA IB=0mA Ta=25°C 100 1000 1000 10 1000 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current Ta=25°C VCE=3V 0.01 0.1 1.0 2.0 0.2 0.02 0.05 0.5 1000 10 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current IC/IB=20/1 Ta=25°C 1 2 5 10 20 50 100 200 500 100 0 TRANSITION FREQUENCY : fT (MHz) EMITTER CURRENT : −IE (mA) Fig.5 Gain bandwidth product vs. emitter current 500 200 100 Ta=25°C VCE=5V 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.6 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 100 1000 Ta=25°C f=1MHz I E=0A Ic=0A Ic Max (Pulse) Ta=25°C Single non-repetitive pulse Pw=10m S Pw=100mSDC COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) 0.1 0.2 0.5 1 2 5 10 20 50100 500 200 100 0 20m 10m 50m 100m 200m 500m Fig.7 Safe operating area (2SD1898)
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