2SD1733_15 KEXIN

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  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SD1733 ■ Features

  • High VCEO, VCEO=80V
  • High IC, IC=1A (DC)
  • Low VCE (sat)
  • Complementary to 2SB1181 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1 Collector Current - Pulse ICP 2 Collector Power Dissipation Tc=25°C 10 Ta=25°C 1 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 120 Collector- emitter breakdown voltage VCEO Ic= 1 mA，IB= 0 80 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 5 Collector-base cut-off current ICBO VCB= 100 V , IE= 0 1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.5 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB=50 mA 0.15 0.4 Base - emitter saturation voltage VBE(sat) IC=500m A, IB=50 mA 1.2 DC current gain hFE VCE= 3V, IC= 500 mA 120 390 Collector Output capacitance Cob VCB= 10V, IE= 0,f=1MHz 20 pF Transition frequency fT VCE= 10V, IE= -50mA,f=100MHz 100 MHz V V uA ■ Classification of hfe Type 2SD1733-Q 2SD1733-P Range 120-270 180-390

www.kexin.com.cn2 Transistors NPN Transistors 2SD1733 ■ Typical Characterisitics 0.1 COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics 1000 100 Ta=25°C VCE=5V 2 4 0180 6 COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics 1.0 0.8 0.6 0.4 0.2 6mA 5mA 4mA 3mA 2mA 1mA IB=0mA Ta=25°C 100 1000 100 0001010 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current Ta=25°C VCE=3V 0.01 0.1 1.0 2.0 0.2 0.02 0.05 0.5 100 0001010 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current IC/IB=20/1 Ta=25°C 1 2 5 10 20 50 100 200 5001000 TRANSITION FREQUENCY : fT (MHz) EMITTER CURRENT : IE (mA) Fig.5 Gain bandwidth product vs. emitter current 500 200 100 Ta=25°C VCE=5V 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.6 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 100 1000 Ta=25°C f=1MHz IE=0A Ic=0A