2SD1623_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors NPN Transistors 2SD1623 ■ Features
- Low collector-to-emitter saturation voltage.
- Large current capacity and wide ASO.
- Fast switching speed.
- Complementary to 2SB1123 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 2 Collector Current - Pulse ICP 4 Collector Power Dissipation 0.5 (Note.1) 1.3 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A PC W Note.1:Mounted on ceramic board (250mm ×0.8mm)2 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA，RBE= ∞ 50 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 6 Collector-base cut-off current ICBO VCB= 50 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=1 A, IB=50 mA 0.15 0.4 Base - emitter saturation voltage VBE(sat) IC=1 A, IB=50 mA 0.9 1.2 VCE= 2V, IC= 100 mA 100 560 VCE= 2V, IC= 1.5 A 40 Turn-ON Time ton 60 Storage Time tstg 550 Fall Time tf 30 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 12 pF Transition frequency fT VCE= 10V, IC= 50mA 150 MHz DC current gain hFE V See specified Test Circuit. ns V uA 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Classification of hfe(1) Type 2SD1623-R 2SD1623-S 2SD1623-T 2SD1623-U Range 100-200 140-280 200-400 280-560 Marking DF R* DF S* DF T* DF U*
www.kexin.com.cn2 Transistors NPN Transistors 2SD1623 ■ Typical Characterisitics tiucriC tseT emiT gnihctiwS VR RB 25V--5V + + 50Ω INPUT OUTPUT RL=50Ω 100μF 470μF PW=20μs IC=10IB1= --10IB2=500mA (For PNP, the polarity is reversed) IB1 D.C.≤1% IB2 1200 800 600 400 200 1000 21420 1086 IC -- VCE IB=0mA 2SD1623 Pulse 3mA 2mA 1mA 7mA 6mA 5mA 4mA 2.4 1.6 1.2 0.8 0.4 2.0 IC -- VCE IB=0mA 2SD1623 Pulse 2mA 8mA 4mA 25mA 15mA 50mA 40mA Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- mA hFE -- IC 1000 100 2 3 510 5532100 2 377 1000 2SD1623 VCE=2V Collector Current, IC -- mA DC Current Gain, hFE 1200 1000 800 600 400 200 IC -- VBE 2SD1623 VCE=2V Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- mA
www.kexin.com.cn 3 Tran sistors NPN Transistors 2SD1623 ■ Typical Characterisitics fT -- IC 1000 100 2 3 510 2 3 5100 2 377 1000 2SD1623 VCB=10V Cob -- VCB 010.1 100 2 73 5 1002 73 5 2SD1623 f=1MHz Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz Collector-to-Base Voltage, VCB -- V Output Capacitance, Cob -- pF 0.8 0.6 0.5 0.4 0.2 0 20 40 60 100 120 16014080 PC -- Ta 2SD1623 Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C 1.0 0.1 0.01 100 7753210 332 5100 21000 VCE(sat) -- IC 2SD1623 IC / IB=20 Collector Current, IC -- mA Collector-to-Emitter Saturation Voltage, VCE(sat) -- V No heat sink A S O 1.0 0.1 010.1 2 5 73 1002 5 735 7 IC=2A ICP=4A 10ms 1ms 100ms DC operation 2SD1623 Ta=25°C Single pulse For PNP, minus sign is omitted Mounted on a ceramic board (250mm2 0.8mm) Collector Current, IC -- A Collector-to-Emitter Voltage, VCE -- V