2SB1123-D SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

Features

  • Adoption of FBET, MBIT processes.
  • Low collector-to-emitter saturation voltage.
  • Large current capacity and wide ASO.
  • Fast switching speed.
  • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization. Specifications ( ) : 2SB1123 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (- -)60 V Collector-to-Emitter Voltage VCEO (- -)50 V Emitter-to-Base Voltage VEBO (- -)6 V Collector Current IC (- -)2 A Collector Current (Pulse) ICP (- -)4 A Collector Dissipation PC 0.5 W Mounted on a ceramic board (250mm2✕0.8mm) 1.3 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Marking 2SB1123 : BF 2SD1623 : DF www.semiconductor-sanyo.com/network 31010EA TK IM / N1501 TS IM / 92098 HA (KT) / 4107 KI / N275 KI / 3045 MW, TS Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. SANYO Semiconductors DATA SHEET 2SB1123 / 2SD1623 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications

No.1727-2/5 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unitmin typ max Collector Cutoff Current I CBO VCB=(- -)50V, IE=0A (- -)100 nA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)100 nA DC Current Gain hFE1V CE=(- -)2V, IC=(- -)100mA 100* 560* hFE2V CE=(- -)2V, IC=(- -)1.5A 40 Gain-Bandwidth Product f T VCE=(- -)10V, IC=(- -)50mA 150 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (22)12 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=(- -)1A, IB=(- -)50mA (- -0.3)0.15 (- -0.7)0.4 V Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)1A, IB=(- -)50mA (- -)0.9 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -)60 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)6 V Turn-ON Time t on See specified Test Circuit. (60)60 ns Storage Time t stg See specified Test Circuit. (450)550 ns Fall Time t f See specified Test Circuit. (30)30 ns *: The 2SB1123 / 2SD1623 are classified by 100mA hFE as follows: Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Package Dimensions Switching Time Test Circuit unit : mm (typ) 7007B-004 VR RB 25V--5V + + 50Ω INPUT OUTPUT RL=50Ω 100μF 470 μF PW=20μs IC=10IB1= --10IB2=500mA (For PNP, the polarity is reversed) IB1 D.C.≤1% IB2

No.1727-3/5 --2.4 --1.6 --1.2 --0.8 --0.4 --2.0 IC -- VCE IB=0mA ITR08891 2SB1123 Pulse --2mA --8mA --6mA --4mA --20mA --10mA --50mA --1200 --800 --600 --400 --200 --1000 IC -- VCE IB=0mA ITR08893 2SB1123 Pulse --3mA --2mA --1mA --7mA --6mA --5mA --4mA 1200 800 600 400 200 1000 024 1 2 1086 IC -- VCE IB=0mA ITR08894 2SD1623 Pulse 3mA 2mA 1mA 7mA 6mA 5mA 4mA 2.4 1.6 1.2 0.8 0.4 2.0 IC -- VCE IB=0mA ITR08892 2SD1623 Pulse 2mA 8mA 4mA 25mA 15mA 50mA 40mA Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA hFE -- IC 1000 100 23 5--10 23 5 5--100 2377 --1000 ITR08897 2SB1123 VCE= --2V hFE -- IC 1000 100 23 510 23 5 5100 2377 1000 ITR08898 2SD1623 VCE=2V Collector Current, IC -- mA DC Current Gain, hFE Collector Current, IC -- mA DC Current Gain, hFE --1200 --1000 --800 --600 --400 --200 IC -- VBE ITR08895 2SB1123 VCE= --2V 1200 1000 800 600 400 200 IC -- VBE ITR08896 2SD1623 VCE=2V Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA

No.1727-4/5 fT -- IC Cob -- VCB --1.0 --10 100 27 35 --10027 35 ITR08901 1000 100 23 5--10 23 5--100 2377 --1000 ITR08899 2SB1123 VCB=10V 2SB1123 f=1MHz fT -- IC 1000 100 23 510 23 5100 2377 1000 ITR08900 2SD1623 VCB=10V Cob -- VCB 1.0 10 100 27 35 10027 35 ITR08902 2SD1623 f=1MHz Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF A S O 1.0 0.1 1.0 10 25 7 3 10025 7 357 ITR08906 0.8 0.6 0.5 0.4 0.2 0 20 40 60 100 120 160 14080 PC -- Ta IT04221 2SB1123 / 2SD1623 IC=2A ICP=4A 10ms 1ms 100ms DC operation 2SB1123 / 2SD1623 Ta=25°C Single pulse For PNP, minus sign is omitted Mounted on a ceramic board (250mm2✕0.8mm) Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C --1.0 --0.1 --0.01 --100 --10 23 5 7 7--10 23 3 5--100 2--1000 ITR08903 VCE(sat) -- IC 2SB1123 IC / IB=20 1.0 0.1 0.01 100 23 5 7 710 23 3 5100 21000 ITR08904 VCE(sat) -- IC 2SD1623 IC / IB=20 Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- V Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- V No heat sink

No.1727-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. 1.6 1.4 1.2 1.3 0.8 1.0 0.6 0.4 0.2 0 20 40 60 100 120 160 14080 PC -- Ta IT04222 2SB1123 / 2SD1623 Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C Mounted on a ceramic board(250mm 2✕0.8mm)