2SD1622_15 KEXIN

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  • Manufacturer or author: Provided By digicamel.com
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Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SD1622 ■ Features

  • Very small size making it easy to provide highdensity, small-sized hybrid IC’s.
  • Complementary to 2SB1122 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1 Collector Current - Pulse ICP 2 Collector Power Dissipation 0.5 (Note.1) 1.3 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A PC W Note.1:Mounted on ceramic board (250mm ×0.8mm)2 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA，RBE= ∞ 50 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 5 Collector-base cut-off current ICBO VCB= 50 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB=50 mA 0.12 0.3 Base - emitter saturation voltage VBE(sat) IC=500 mA, IB=50 mA 0.9 1.2 VCE= 2V, IC= 100 mA 100 560 VCE= 2V, IC= 1 A 30 Turn-ON Time ton 40 Storage Time tstg 350 Fall Time tf 30 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 8.5 pF Transition frequency fT VCE= 10V, IC= 50mA 150 MHz See specified Test Circuit. ns V uA DC current gain hFE V 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Classification of hfe(1) Type 2SD1622-R 2SD1622-S 2SD1622-T 2SD1622-U Range 100-200 140-280 200-400 280-560 Marking DE R* DE S* DE T* DE U*

www.kexin.com.cn2 Transistors NPN Transistors 2SD1622 ■ Typical Characterisitics tiucriC tseT emiT gnihctiwS VR RB 25V--5V + + 50Ω INPUT OUTPUT RL 50Ω 100μF 470μF PW=20μs IC=10IB1= --10IB2=500mA (For PNP, the polarity is reversed) IB1 D.C.≤1% IB2 IC -- VCE Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A IC -- VBE Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- mA 1.0 0.6 0.4 0.2 0.8 5210 43 IB=0mA 2mA 1mA 9mA 8mA 7mA 5mA 6mA 4mA 3mA10mA 2SD1622 1200 1000 800 600 400 200 Ta=75 --25 2SD1622 VCE=2V hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE Cob -- VCB Collector-to-Base Voltage, VCB -- V Output Capacitance, Cob -- pF 010.1 2 73 5 1002 73 575 2SD1622 1000 100 2 3 510 2 3 5100 2 3775 7 1000 2SD1622 VCE=2V Ta=75°C 25°C --25°C f=1MHz For PNP, minus sign is omitted

www.kexin.com.cn 3 Tran sistors NPN Transistors 2SD1622 ■ Typical Characterisitics fT -- IC Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz 32325 5510 77 100 100 2SD1622 VCE=10V For PNP, minus sign is omitted VCE(sat) -- IC Collector Current, IC -- mA Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 100 1000 2 3 5 7 775 10 2 3 5100 21000 2SD1622 IC / IB=10 Ta=75 25°C --25°C VBE(sat) -- IC Collector Current, IC -- mA Base-to-Emitter Saturation Voltage, VBE(sat) -- V 1.0 2 3 5 7 775 10 2 3 5100 21000 2SD1622 IC / IB=10 75°C 25°C Ta= --25°C A S O Collector Current, IC -- A Collector-to-Emitter Voltage, VCE -- V 0.1 0.01 1.0 010.1 2 5 73 1002 5 735 7 10ms 1ms100ms DC operation 2SD1622ICP=2A IC=1A For PNP, minus sign is omitted Ta=25°C Single pulse Mounted on a ceramic board (250mm2 0.8mm) PC -- Ta Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C 1.4 1.2 0.8 1.0 0.6 0.4 1.3 0.5 0.2 0 20 40 60 100 120 16014080 Mounted on a ceramic board (250mm 0.8mm) No heat sink 2SD1622