2SD1622 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Adoption of FBET process.. Very small size making it easy to provide highdensity hybrid IC’s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 60 V Collector-emitter voltage V CEO 50 V Emitter-base voltage V EBO 5V Collector current I C 1A Collector current (pulse) I CP 2A PC 500 mW PC *1 . 3 W Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 * Mounted on ceramic board(250mm2X0.8mm) Collector dissipation
www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO VCB =5 0V ,IE=0 100 nA Emitter cutoff current I EBO VEB =4V ,I C=0 100 nA DC current gain h FE VCE =2V,I C = 100 mA 100 560 Gain bandwidth product f T VCE =1 0V,I C = 50 mA 150 MHz Output capacitance C ob VCB = 10 V , f = 1.0MHz 8.5 pF Collector-emitter saturation voltage V CE(sat) IC =5 0 0m A,IB = 50 mA 120 300 mV Base-emitter saturation voltage V BE(sat) IC =5 0 0m A,IB =5 0m A 0 . 9 1 . 2 V Collector-base breakdown voltage V (BR)CBO IC =1 0 ì A,IE =0 6 0 V Collector-emitter breakdown voltage V (BR)CEO IC =1 m A,RBE = 50 V Emitter-base breakdown voltage V (BR)EBO IE =1 0 ì A,IC =0 5 V Turn-on timie ton 40 ns Storage time tstg 350 ns Turn-off time tf 30 ns 2SD1622 hFE Classification Marking Rank R S T U hFE 100 200 140 280 200 400 280 560 DE