2SB1122 SANYO

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.« Adoption of FBET process . Very small size making it easy to provide high-density hybrid ICs. ( ): 28B1122 Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Voso (-)60 v Collector to Emitter Voltage Vogo (-)50 v Emitter to Base Voltage VB (-)5 Vv Collector Current Ic (-)1 A Collector Current(Pulse) Icp (-)2 A Collector Dissipation P, 500 mW Mounted on ceramic board (250mm® X 0.8mm) 1.3 W Junction Temperature Tj 150 °C Storage Temperature Tste -55 to +150 °c Electrical Characteristics at Ta=25°C min typ: max unit Collector Cutoff Current Ippo Vope(-)50V,Ip20 (-)100 nA Emitter Cutoff Current Ipp Vigpe(~)4V,Ig=0 (-)100 nA DC Current Gain beet) Vop=(-)2V,I¢=(-)100ma 100* 560" hpg(2)° Voge(-)2V,Ig=(-) 14 30 Gain-Bandwidth Product fir Vege (-) 10V, I¢=(-)50mA 150 MHz Output Capacitance Cop Vop=(-) 10V, f= 1MHz (12) pF 7 8.5 pF C-E Saturation Voltage Vop(sat) Ic=(-)500mA,Ig=(-)50mA (-180) (~500) mv . 120 300 mV B-E Saturation Voltage Vpr(sat) Ic=(-)500mA,T,=(~)50mA (-)0.9(-)1.2 V C-B Breakdown Voltage © V(prycpq Ic=(-) 10pA,1_=0 (-)60 v C-E Breakdown Voltage VBR) CEO Ig=(-) 1mA,R, E=OO (=)50 Vv E-B Breakdown Voltage V(BR)EBO Tge(-) 100A, Ee20 (-)5 Vv Continued ‘on next--page. *: The 2SB1122/2SD1622 are classified by 100mA hpg as follows:

100 R 200 140 S 280 | 200 T 400 | 280 U 560

Switching Time Test Circuit Package Dimensions 2038 (unit: mm) es Ae A 4 , thd Se Pr ° a CI ‘Sour t) Marking 2SB1122:BE Ty vR, _ ay 28D 1622:DE ak 50 hpg rank :R,S,T,U 7 =" te tel be OF bv Vv 3.0" 0.4 {c=10181=-101 82=500ma E: Emitter (For PNP, the polarity is reversed.) _&: Gollector Unit (Resistance : 2, Capacitance : F) (Bottom View) SANYO: PCP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN : 4107K1/9266AT,TS No.2040-1/4

Continued from preceding page. min typ max unit Turn-on Time to, See specified Test Circuit. (40) ns " 40 ns Storage Time tstg " (300) ns . 350 ns Fall Time te " (30) ns " 30 ns 10 to tee __ 10 a 4 7 a es — [ | | 2801622 BA. i acs < Va a Oh KA = — e LT Ye 2 $$ fee row | # WEE | Sera eae — 4 s 4 i i =\\nA_ i 3 ot -o.2 PA i © o WZ _1h Fee FEE Collector to Emitter Voltage, Vop - V Collector to Emitter Voltage,Vcg - V Ic - Vee 1200 I¢_- VBE me H Pt eet [| _ a iH #7 so00) TI iid tot 2200 Ht . [fy i Hf wool fff | yy | eccecee!// Sone Maceeeeet/isee : oP H © «oot + | | vet ee PTT | gs CET yy tT |) 8 rE] PE (Py yy 8 oot tL) af po on LL =f. pf +H 3 mo | fa 8 chr Fe a Base to Emitter Voltage, Vpp -Vv Base to Emitter Voltage, Vpp -Vv 1000 sain 1009 goo _ Po ea BAe . DCSE FO TPH oe on a So - 2 — ==> — Ji eNO Pe 8 100 \\. a eh or » 7 Py ANH g Co 3 oto 8 TTT rT Ww] E Hyp Ey TT Bote & ft—— TTPO 8 ott TE tt tt =o EMEt Sees ==== SH st ri Oe ee ” Collector Current ,Ig - mA Collector Current,I¢ - mA

(OO) + Co iH t fie ap Fo LL eTee | PRR é x e tote tH PH ARS co ee ee aati ot Tr eg Ty yyy ya ‘ 3 | a For PNP, minus sign is omitted. a For PNP, minus sign is omitted. [| 10 5 100 1.0 10 100 Collector Current,Ig - mA Collector to Base Voltage,Vog - V . Vee(sat) - Ic 5 Voe(sat) - Ic Ed Se 3 “eet ee HERE EH & Jt | oly | gs TT ipo | we oa A Ff To Cy Be lf Zo 33 fA | aq? “OC eZ rj #3 yZ2enne

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gf [7 88 Do os _ fF ot fd | | #2 of | dz -0h, oe ta 4+ 33 0 [| 8 8 =10 100 1000 10 100 1000 Collector Current,I¢ = mA Collector Current Ip - mA eG Vge(sat) - Ic > "oT pee ee eee ' am Silnrsnaiatia ds bumaniiniaiis z . HH | HS i LT TT +4 * gt Try ol fT A eo 4, lee 1.0 ———| gS Eo Co SS ea at Fo P| |_| ag i) Ferret fr ef att ty 3% Ut} | I os =! os 3 “collector Current,I¢ - mA Collector Current,Ig - mA ASO Po - Ta . Pet essere | Te BSB1120 7 2801602 ESE ASR og | | Ne > g¢ 1 NJ WY TT qe ee ! ee Se ve a ee 0 ASN eit

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§ ‘For PNP, minus sign | N. | YT} Boos No Ko | Q dae onstted + t-te 0.6, —} se Boag | 47a=25°C. one Pulse [ONT g | | a Seay aN S zMounted on ceramic board ; 1| 3°? SEN 0.01|¢250mm? x 0. 8am) aa 3 L_| | mess 1.0 10 100 0 20 40 60 60 100 120 %0 160 Collector to Emitter Voltage, Vo -Vv Ambient: Temperature ,Ta - % No.2040-3/4

2SB1122/2SD1622 ; SS No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO,, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Ml Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.2040-4/4